tag: doping

Research Bits: Mar. 31
By Jesse Allen - 31 Mar, 2026 - Comments: 0

2D hard mask material Researchers from Penn State University and University of Chemistry and Technology Prague propose using the 2D material chromium oxychloride (CrOCl) as a hard mask, because its layered structure is resistant to plasma etching and enables it to be an effective mask at smaller thicknesses. “This 2D material is like lasagna. It’s a layer-by-layer structure,” said Zih... » read more

Better Contact Resistance in Top-Gate CNFETs through Self-Aligned MoOx Nanoparticle Contact Doping (NYCU et al.)
By Technical Paper Link - 24 Jan, 2026 - Comments: 0

A new technical paper titled "Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx Nanoparticle Contact Doping" was published by researchers at National Yang Ming Chiao Tung University and National Center for Instrumentation Research. "Carbon nanotubes (CNTs) are promising candidates for next-generation back-end-of-line (BEOL) compatible devices due t... » read more

Doping-Dependent Charge Trapping in WS2 FETs (KU Leuven, imec, TU Wien)
By Technical Paper Link - 12 Jan, 2026 - Comments: 0

A new technical paper titled "Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs" was published by researchers at KU Leuven, imec and TU Wien. Abstract "We report doping-dependent charge trapping in WS2 field-effect transistors fabricated on a 300 mm wafer. In particular, higher n-type doping–associated with smaller channel areas–correlat... » read more

Research Bits: Nov. 10
By Jesse Allen - 10 Nov, 2025 - Comments: 0

Post-doping plasma for DRAM capacitors Researchers from Ulsan National Institute of Science and Technology (UNIST), Pohang University of Science and Technology (POSTECH), and Seoul National University of Science and Technology developed a post-doping plasma (PDP) process to improve the performance of DRAM capacitors. Aluminum-doped titanium dioxide (Al-doped TiO2) is a promising material fo... » read more

Research Bits: Oct. 7
By Jesse Allen - 07 Oct, 2025 - Comments: 0

Doping oxide insulator improves SiGe conductivity Researchers from TU Wien, Johannes Kepler University Linz, and TU Bergakademie Freiberg manufactured a silicon-germanium (SiGe) transistor using an alternative approach that involves doping the insulating oxide layer to produce a long-range effect that extends into the semiconductor. Called modulation acceptor doping (MAD), the technique ena... » read more

Semiconductor Device Manufacturing Process Challenges And Opportunities
By Andreas Bier - 07 Dec, 2023 - Comments: 0

Semiconductor device manufacturing involves a complex series of processes that transform raw materials into finished devices. The process typically involves four major stages: wafer fabrication, wafer testing, assembly or packaging, and final testing. Each stage has its own unique set of challenges and opportunities. The semiconductor device manufacturing process faces several challenges, inclu... » read more

Progress In The Fabrication Of CMOS Devices Based On Stacked 2D TMD Nanoribbons (Intel)
By Technical Paper Link - 27 Oct, 2023 - Comments: 0

A technical paper titled “Process integration and future outlook of 2D transistors” was published by researchers at Intel Corporation. Abstract: "The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the r... » read more

Epi SiGe Application Using METRION In-Line SIMS System
By Nova - 07 Mar, 2023 - Comments: 0

The epitaxial process is a well-established deposition technique in semiconductor fabrication because it enables the ability to achieve much higher doping concentrations than can be obtained via ion implantation. As we move toward <5nm technology, a key process for enabling gate-all-around FET (GAAFET) is the stacked multi-lattice of Silicon (Si) and Silicon-germanium (SiGe) epi process for ... » read more

Scaling Down To 2nm: Using Microwaves For Efficient & Stable Doping
By Technical Paper Link - 09 Sep, 2022 - Comments: 0

A new technical paper titled "Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit" was just published by researchers at National Taiwan University, Cornell University, TSMC, University of Valladolid, DSG Technologies, National Central University and National Yang Ming Chiao Tung University. A modified microwave was used... » read more

Speeding Up NMOS
By Ed Sperling - 08 Jul, 2013 - Comments: 0

By Ed Sperling For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it has been catching up in performance, too. In fact, at 20nm the two transistor types have proven nearly equal in performance—but not for long. NMOS is about to get a big bo... » read more

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