Outlook: DRAM, NAND, Next-Gen Memory


Jim Handy, director at Objective Analysis, sat down with Semiconductor Engineering to talk about the 3D NAND, DRAM and next-generation memory markets. What follows are excerpts of that discussion. SE: How would you characterize the NAND market thus far in 2021? Handy: All chips are seeing unusual strength in 2021, but NAND flash and DRAM are doing what they usually do by exhibiting more e... » read more

Uncovering In-DRAM RowHammer Protection Mechanisms: A New Methodology, Custom RowHammer Patterns, and Implications


Abstract: "The RowHammer vulnerability in DRAM is a critical threat to system security. To protect against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips rely on undocumented, proprietary, on-die mitigations, commonly known as Target Row Refresh (TRR). At a high level, TRR detects and refreshes potential RowHammer-victim rows, but its exact are not openly disclose... » read more

Improving DRAM Performance, Security, and Reliability by Understanding and Exploiting DRAM Timing Parameter Margins


Abstract: "Characterization of real DRAM devices has enabled findings in DRAM device properties, which has led to proposals that significantly improve overall system performance by reducing DRAM access latency and power consumption. In addition to improving system performance, a deeper understanding of DRAM technology via characterization can also improve device reliability and security. The... » read more

A Deeper Look into RowHammer’s Sensitivities: Experimental Analysis of Real DRAM Chips and Implications on Future Attacks and Defenses


Abstract "RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than... » read more

Changing Server Architectures In The Data Center


Data centers are undergoing a fundamental shift to boost server utilization and improve efficiency, optimizing architectures so available compute resources can be leveraged wherever they are needed. Traditionally, data centers were built with racks of servers, each server providing computing, memory, interconnect, and possibly acceleration resources. But when a server is selected, some of th... » read more

More Errors, More Correction in Memories


As memory bit cells of any type become smaller, bit error rates increase due to lower margins and process variation. This can be dealt with using error correction to account for and correct bit errors, but as more sophisticated error-correction codes (ECC) are used, it requires more silicon area, which in turn drives up the cost. Given this trend, the looming question is whether the cost of ... » read more

HBM3: Big Impact On Chip Design


An insatiable demand for bandwidth in everything from high-performance computing to AI training, gaming, and automotive applications is fueling the development of the next generation of high-bandwidth memory. HBM3 will bring a 2X bump in bandwidth and capacity per stack, as well as some other benefits. What was once considered a "slow and wide" memory technology to reduce signal traffic dela... » read more

Multi-DRAM Memory Subsystems In SoCs


Even with DRAM capacity going up with each generation of DRAM, the demand for memory densities by a variety of applications is growing at an even faster rate. To support these high memory densities and bus width requirements (that are typically more than what a single DRAM can support), almost all the new generation of memory subsystems and SoCs have multiple DRAM dies combined to effectively c... » read more

What’s Changing In DRAM


Most of the attention in chip scaling has been focused on logic and on-chip memory, but off-chip memory is starting to encounter problems, as well. David Fried, vice president of computational products at Lam Research, looks at the impact of shrinking features and increasing density, including variation, thermal effects and aging, as well as effects such as micro-loading and DRAM stacking. » read more

Will Monolithic 3D DRAM Happen?


As DRAM scaling slows, the industry will need to look for other ways to keep pushing for more and cheaper bits of memory. The most common way of escaping the limits of planar scaling is to add the third dimension to the architecture. There are two ways to accomplish that. One is in a package, which is already happening. The second is to sale the die into the Z axis, which which has been a to... » read more

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