Data Filtering Directly Within A NAND Flash Memory Chip


A technical paper titled “Search-in-Memory (SiM): Reliable, Versatile, and Efficient Data Matching in SSD's NAND Flash Memory Chip for Data Indexing Acceleration” was published by researchers at TU Dortmund, Academia Sinica, and National Taiwan University. "This paper introduces the Search-in-Memory (SiM) chip, which demonstrates the feasibility of performing data filtering directly with... » read more

Memory Implications Of Gen AI In Gaming


The global gaming market across hardware, software and services is on track to exceed annual revenues of $500B in 2025.1 That’s bigger by an order of magnitude than the combination of movies and music. On the cutting edge of that enormous market is open world gaming, where the driving goal is to give players the freedom to do anything they can imagine in a coherent and immersive environment. ... » read more

Are You Ready For HBM4? A Silicon Lifecycle Management (SLM) Perspective


Many factors are driving system-on-chip (SoC) developers to adopt multi-die technology, in which multiple dies are stacked in a three-dimensional (3D) configuration. Multi-die systems may make power and thermal issues more complex, and they have required major innovations in electronic design automation (EDA) implementation and test tools. These challenges are more than offset by the advantages... » read more

Secure Low-Cost In-DRAM Trackers For Mitigating Rowhammer (Georgia Tech, Google, Nvidia)


A new technical paper titled "MINT: Securely Mitigating Rowhammer with a Minimalist In-DRAM Tracker" was published by researchers at Georgia Tech, Google, and Nvidia. Abstract "This paper investigates secure low-cost in-DRAM trackers for mitigating Rowhammer (RH). In-DRAM solutions have the advantage that they can solve the RH problem within the DRAM chip, without relying on other parts of ... » read more

Chip Industry Week In Review


The University of Texas at Austin’s Texas Institute for Electronics (TIE) was awarded $840 million to establish a Department of Defense microelectronics manufacturing center. This center will focus on developing advanced semiconductor microsystems to enhance U.S. defense systems. The project is part of DARPA's NGMM Program. The U.S. Dept. of Commerce announced preliminary terms with Global... » read more

Heat-Related Issues Impact Reliability In Advanced IC Designs


Heat is becoming a much bigger problem in advanced-node chips and packages, causing critical electrons to leak out of DRAM, timing and reliability issues in 3D-ICs, and accelerated aging that are unique to different workloads. All types of circuitry are vulnerable to thermal effects. It can slow the movement of the electrons through wires, cause electromigration that shortens the lifespan of... » read more

Analysis Of The On-DRAM-Die Read Disturbance Mitigation Method: Per Row Activation Counting


A technical paper titled “Understanding the Security Benefits and Overheads of Emerging Industry Solutions to DRAM Read Disturbance” was published by researchers at ETH Zürich and TOBB University of Economics and Technology. Abstract: "We present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per... » read more

LPDDR Memory Is Key For On-Device AI Performance


Low-Power Double Data Rate (LPDDR) emerged as a specialized high performance, low power memory for mobile phones. Since its first release in 2006, each new generation of LPDDR has delivered the bandwidth and capacity needed for major shifts in the mobile user experience. Once again, LPDDR is at the forefront of another key shift as the next wave of generative AI applications will be built into ... » read more

Virtual Exploration Of Novel Vertical DRAM Architectures


In this article, we demonstrate a pathfinding technique for a novel Vertical DRAM technology. First, we identify important process parameters (defined by current semiconductor production equipment capabilities) that strongly impact yield. By using a virtual model, we then perform experimental optimization of the Vertical DRAM device across specific target ranges, to help predict and improve the... » read more

Rowhammer Bit Flips On A High-End RISC-V CPU (ETH Zurich)


A new technical paper titled "RISC-H: Rowhammer Attacks on RISC-V" was published by researchers at ETH Zurich.  RISC-H will be presented at DRAMSec (co-located with ISCA 2024) Abstract: "The first high-end RISC-V CPU with DDR4 support has been released just a few months ago. There are currently no Rowhammer studies on RISC-V devices and it is unclear whether it is possible to compromise ... » read more

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