Memory And High-Speed Digital Design


As DRAM gets faster, timing constraints, jitter, and signal integrity become harder to control. The real challenge is to understand what can go wrong early in the design process, and that becomes more complex with each new version of memory and higher signal speeds. Stephen Slater, product manager for EDA products at Keysight, talks about how simulation can be applied to these issues, what to t... » read more

CXL: The Future Of Memory Interconnect?


Momentum for sharing memory resources between processor cores is growing inside of data centers, where the explosion in data is driving the need to be able to scale memory up and down in a way that roughly mirrors how processors are used today. A year after the CXL Consortium and JEDEC signed a memorandum of understanding (MOU) to formalize collaboration between the two organizations, suppor... » read more

Week In Review: Manufacturing, Test


Bosch completed its acquisition of TSI Semiconductors to expand its SiC chips business, reports Reuters. In April, Bosch announced plans to invest $1.5 billion in the Roseville, California, foundry to convert TSI’s manufacturing facilities into state-of-the-art processes, with the first SiC chips due out in 2026. Bosch CEO Stefan Hartung said the full expansion "depends on the support of the... » read more

Demonstrating The Capabilities Of Virtual Wafer Process Modeling And Virtual Metrology


A technical paper titled “Review of virtual wafer process modeling and metrology for advanced technology development” was published by researchers at Coventor Inc., Lam Research. Abstract: "Semiconductor logic and memory technology development continues to push the limits of process complexity and cost, especially as the industry migrates to the 5 nm node and beyond. Optimization of the p... » read more

A Practical DRAM-Based Multi-Level PIM Architecture For Data Analytics


A technical paper titled "Darwin: A DRAM-based Multi-level Processing-in-Memory Architecture for Data Analytics" was published by researchers at Korea Advanced Institute of Science & Technology (KAIST) and SK hynix Inc. Abstract: "Processing-in-memory (PIM) architecture is an inherent match for data analytics application, but we observe major challenges to address when accelerating it usi... » read more

RowPress: Read-Disturb Phenomenon In DDR4 DRAM Chips


A technical paper titled "RowPress: Amplifying Read Disturbance in Modern DRAM Chips" was published by researchers at ETH Zürich. Abstract: "Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly opening and clo... » read more

Week In Review: Semiconductor Manufacturing, Test


China retaliated against a U.S. embargo on advanced semiconductor equipment exports by restricting exports of gallium and germanium. Both metals are widely used in semiconductors and electric vehicles. Despite export controls for advanced chips and equipment imposed on Chinese foundries by the U.S. and its allies, TrendForce predicts China's 300mm market share likely will increase from 24% ... » read more

DRAM Translation Layer, Mechanism for Flexible Address Mapping and Data Migration Within CXL-Based Memory Devices


A technical paper titled “DRAM Translation Layer: Software-Transparent DRAM Power Savings for Disaggregated Memory” was published by researchers at Seoul National University. Abstract: "Memory disaggregation is a promising solution to scale memory capacity and bandwidth shared by multiple server nodes in a flexible and cost-effective manner. DRAM power consumption, which is reported to be... » read more

Low Density Of LPDDR4x DRAM — The Best Choice For Edge AI


Edge AI computes the data as close as possible to the physical system. The advantage is that the processing of data does not require a connected network. The computation of data happens near the edge of a network, where the data is being developed, instead of in a centralized data-processing center. One of the biggest benefits of edge AI is the ability to secure real-time results for time-sensi... » read more

Improving DRAM Device Performance Through Saddle Fin Process Optimization


As DRAM technology nodes have scaled down, access transistor issues have been highlighted due to weak gate controllability. Saddle Fins with Buried Channel Array Transistors (BCAT) have subsequently been introduced to increase channel length, prevent short channel effects, and increase data retention times [1]. However, at technology nodes beyond 20nm, securing sufficient device performance (su... » read more

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