tag: EUV lithography

Recent Progress in Inorganic Metal-Oxide-Based Photoresists For EUVL
By Technical Paper Link - 29 Oct, 2024 - Comments: 0

A technical paper titled "Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography" was published by researchers at University of South–Eastern Norway. Abstract: "Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent... » read more

Research Bits: Aug. 13
By Jesse Allen - 13 Aug, 2024 - Comments: 0

3D X-ray of chip interiors Researchers from the Paul Scherrer Institute, EPFL Lausanne, ETH Zurich, and the University of Southern California used X-rays to take non-destructive, three-dimensional images of the inside of a microchip at 4 nanometer resolution. To create the images, the researchers relied on a technique called ptychography, in which a computer combines many individual images ... » read more

Chip Industry Week in Review
By The SE Staff - 02 Aug, 2024 - Comments: 0

Okinawa Institute of Science and Technology proposed a new EUV litho technology using only four reflective mirrors and a new method of illumination optics that it claims will use 1/10 the power and cost half as much as existing EUV technology from ASML. Applied Materials may not receive expected U.S. funding to build a $4 billion research facility in Sunnyvale, CA, due to internal government... » read more

3D Metrology Meets Its Match In 3D Chips And Packages
By Laura Peters - 11 Jun, 2024 - Comments: 0

The pace of innovation in 3D device structures and packages is accelerating rapidly, driving the need for precise measurement and control of feature height to ensure these devices are reliable and perform as expected throughout their lifetimes. Expansion along the z axis is already well underway. One need look no further than the staircase-like 3D NAND stacks that rise like skyscrapers to p... » read more

Hybrid Photoresist Capable Of High-Resolution, Positive-Tone EUVL Patterning
By Technical Paper Link - 16 Nov, 2023 - Comments: 0

A technical paper titled “Vapor-Phase Infiltrated Organic–Inorganic Positive-Tone Hybrid Photoresist for Extreme UV Lithography” was published by researchers at Stony Brook University, Brookhaven National Laboratory, and University of Texas at Dallas. Abstract: "Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microe... » read more

Patterning With EUV Lithography Without Photoresists
By Technical Paper Link - 12 Oct, 2023 - Comments: 0

A technical paper titled “Resistless EUV lithography: photon-induced oxide patterning on silicon” was published by researchers at Paul Scherrer Institute, University College London, ETH Zürich, and EPFL. Abstract: "In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading ... » read more

EUVL: Extreme Ultraviolet Lithography Research, Development, And Manufacturing (NIST)
By Technical Paper Link - 06 Sep, 2023 - Comments: 0

A special paper titled “Report from the Extreme Ultraviolet (EUV) Lithography Working Group Meeting: Current State, Needs, and Path Forwards” was published by researchers at National Institute of Standards and Technology (NIST). Abstract: "This is the report of a hybrid working group meeting held on April 25, 2023, at the National Institute of Standards and Technology (NIST) in Boulder, C... » read more

Investigating The Ru/Ta Bilayer As An Alternative EUV Absorber To Mitigate Mask 3D Effects
By Technical Paper Link - 28 Aug, 2023 - Comments: 0

A technical paper titled “Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective” was published by researchers at KU Leuven and imec. Abstract: "The optical properties and geometry of EUV mask absorbers play an essential role in determining the imaging performance of a mask in EUV lithography. Imaging metrics, including Normalized Imag... » read more

Novel Assist Layers To Enhance EUV Lithography Performance Of Photoresists On Different Substrates
By Brewer Science - 16 Aug, 2023 - Comments: 0

In EUV lithography, good resist patterning requires an assist layer beneath it to provide adhesion to prevent pattern collapse of small features and allow for higher aspect ratios. In addition, future EUV high numerical aperture (NA) is expected to require a decrease in thickness from the overall patterning stack. In this study, we are exploring a fundamentally new approach to developing an alt... » read more

EUV Lithography: Results of Single Particle Volume Charging Processes in EUV Exposure Environment With Focus On Afterglow Effects
By Technical Paper Link - 12 Apr, 2023 - Comments: 0

A new technical paper titled "Particle charging during pulsed EUV exposures with afterglow effect" was published by researchers at ASML, ISTEQ B.V., and Eindhoven University of Technology. Abstract "The nanoparticle charging processes along with background spatial-temporal plasma profile have been investigated with 3DPIC simulation in a pulsed EUV exposure environment. It is found that the ... » read more

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