Research Bits: June 18


Gallium nitride can take the heat Researchers from Massachusetts Institute of Technology (MIT), the UAE's Technology Innovation Institute, Ohio State University, Rice University, and Bangladesh University of Engineering and Technology investigated the performance of ohmic contacts in a gallium nitride (GaN) device at extremely high temperatures, such as those that would be required for devices... » read more

System Bits: April 4


Nanodevices for extreme environments in space, on earth Researchers at the Stanford Extreme Environment Microsystems Laboratory (XLab) are on a mission to conquer conditions such as those found on Venus: a hot surface pelted with sulfuric acid rains, 480 degrees C, an atmosphere that would fry today’s electronics. By developing heat-, corrosion- and radiation-resistant electronics, the team ... » read more