Research Bits: June 15


NAND in space Researchers from Georgia Institute of Technology and Pennsylvania State University built ferroelectric NAND flash memory chips that can withstand up to 30 times higher radiation levels compared to conventional NAND. “If you send traditional flash memory to space, the radiation interacting with flash memory’s trapped electric charge can easily corrupt the data,” said Asif... » read more

Research Bits: Mar. 31


2D hard mask material Researchers from Penn State University and University of Chemistry and Technology Prague propose using the 2D material chromium oxychloride (CrOCl) as a hard mask, because its layered structure is resistant to plasma etching and enables it to be an effective mask at smaller thicknesses. “This 2D material is like lasagna. It’s a layer-by-layer structure,” said Zih... » read more

Nonvolatile Electrochemical Memory Cell For Temperatures Up To 600°C (U. Of Michigan, Sandia)


A new technical paper titled "Nonvolatile electrochemical memory at 600°C enabled by composition phase separation" was published by researchers at University of Michigan and Sandia National Laboratories. "Moore’s law has led to monumental advances in computing over the past 50 years. However, one shortcoming of silicon-based logic and memory devices is their limited temperature range, typ... » read more

Automakers And Industry Need Specific, Extremely Robust, Heterogeneously Integrated Chiplet Solutions


Chiplets offer great potential for the automotive and industrial sectors, especially as these applications often have high performance requirements but are needed only in small quantities. The modular principle behind chiplets enables efficient design and production: individual components have to be produced only once and can then be flexibly combined to create tailored solutions. This offers m... » read more

Research Bits: June 18


Gallium nitride can take the heat Researchers from Massachusetts Institute of Technology (MIT), the UAE's Technology Innovation Institute, Ohio State University, Rice University, and Bangladesh University of Engineering and Technology investigated the performance of ohmic contacts in a gallium nitride (GaN) device at extremely high temperatures, such as those that would be required for devices... » read more

System Bits: April 4


Nanodevices for extreme environments in space, on earth Researchers at the Stanford Extreme Environment Microsystems Laboratory (XLab) are on a mission to conquer conditions such as those found on Venus: a hot surface pelted with sulfuric acid rains, 480 degrees C, an atmosphere that would fry today’s electronics. By developing heat-, corrosion- and radiation-resistant electronics, the team ... » read more