Ternary LIM Operation of the TNAND and TNOR Universal Gates Using DG Feedback FETs

A technical paper titled "Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors" was published by researchers at Korea University. Abstract "In this study, the logic-in-memory operations are demonstrated of ternary NAND and NOR logic gates consisting of double-gated feedback field-effect transistors. The component transistor... » read more

Technical Paper Round-up: August 8

New technical papers added to Semiconductor Engineering’s library this week. [table id=44 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)

New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors

Abstract: "The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindra... » read more