ST-Ericsson’s 28nm FD-SOI Smartphone/ Tablet Chip


By Adele Hars In the last blog, we kicked off what promises to be an exciting year with the news that ST-Ericsson announced the NovaThorL8580 ModAp. It’s billed as “the world’s fastest and lowest-power integrated LTE smartphone platform,” is built on STMicroelectronics’ 28nm FD-SOI, and is sampling in Q1 2013. We said it was a game changer, and ST-E’s put together a really good... » read more

ST-Ericsson 28nm FD-SOI/ARM Chip Hits 2.8GHz at CES


Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ What a great start to 2013: at CES in Las Vegas, ST-Ericsson announced the NovaThor™ L8580 ModAp, “the world’s fastest and lowest-power integrated LTE smartphone platform.” This is the one that’s on STMicroelectronics’ 28nm FD-SOI, with sampling set for Q1 2013. And it’s a game changer – for users, fo... » read more

Tradeoffs On The Fly


By Ann Steffora Mutschler With classical bulk planar technology no longer shrinkable, the industry has been honing in on new ways to continue some scaling, achieve extra speed or better power while minimizing leakage. “To overcome the limits [of bulk planar technology] we need a different solution,” explained Giorgio Cesano, technology R&D marketing director at STMicroelectron... » read more

Upping The Ante


The increasing number of research projects under way to solve many of the thorniest issues in the history of semiconductor design and manufacturing are a testament to just how tough the job has become. Never before have there been so many technological roadblocks at the same time—and so many potential options for solving them. Those challenges—or opportunities, as marketing execs like to... » read more

Mix-And-Match Power Options


By Ann Steffora Mutschler Choices abound today when it comes to considering a node shrink. Fully depleted silicon on insulator (FD-SOI) and finFET technologies along with other advanced transistor options are being evaluated, both together and independently of the other. It is possible to implement finFET on bulk 28nm CMOS or finFET on an FD-SOI process, for example. It is also possible to imp... » read more

Don’t miss Fully-Depleted Tech Symposium during IEDM (SF)


Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ If you want to cut through the noise surrounding the choices for 28nm and beyond, an excellent place to start is the SOI Consortium’s Fully Depleted Technology Symposium. As a member of the design and manufacturing communities, this is your chance to see and hear what industry leaders are actually doing. Planar? F... » read more

Wafer Leaders Extend Basis for Global SOI Supply


Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ It’s a bright green light from the world leaders in SOI wafer capacity. Soitec, the world leader in SOI wafer production, and long-time partner Shin-Etsu Handatai (SEH), the world’s biggest producer of silicon wafers, have extended their licensing agreement and expanded their technology cooperation. SEH is a $12... » read more

ST’s FD-SOI Tech Available to All Through GF


Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ In the spring of 2012, STMicroelectronics announced the company would be manufacturing ST-Ericsson’s next-generation (and very successful) NovaThor ARM-based smartphone/tablet processors using 28nm FD-SOI process technology. With first samples coming out this fall, ASN talks to Jean-Marc Chery, Executive Vice Pres... » read more

SPOTLIGHT ON FD-SOI, FINFETS AT IEEE SOI CONFERENCE
;1-4 OCT, NAPA


The 38th annual SOI Conference is coming right up. Sponsored by IEEE Electron Devices Society, this is the only dedicated SOI conference covering the full technology chain from materials to devices, circuits and system applications. Chaired this year by Gosia Jurczak (manager of the Memories Program at imec), this excellent conference is well worth attending. It’s where the giants of the ... » read more

Quiet, Steady And Sometimes Unexpected Advances For SOI


By Ed Sperling After years of talking about equivalent pricing, technical advantages and consistent processes, silicon on insulator finally appears to be making significant inroads—but not necessarily in ways, places, or even at process nodes where it initially was predicted to gain ground. What’s driving at least some of this change is the semiconductor industry’s progression toward ... » read more

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