tag: ferroelectric

Energy Storage: Properties of Barium Titanate (Harvey Mudd)
By Technical Paper Link - 05 Nov, 2024 - Comments: 0

A technical paper titled "Understanding surfaces and interfaces in nanocomposites of silicone and barium titanate through experiments and modeling" was published by researchers at Harvey Mudd College, Sandia National Lab and Air Force Research Laboratory. Abstract "Barium titanate (BTO) is a ferroelectric perovskite used in electronics and energy storage systems because of its high dielectr... » read more

Physics-Based Efficient Device Model for Fe-TFTs (Univ. of Florida)
By Technical Paper Link - 17 Oct, 2024 - Comments: 0

A new technical paper titled "An efficient device model for ferroelectric thin-film transistors" was published by researchers at University of Florida. Abstract "Ferroelectric thin-film transistors (Fe-TFTs) have promising potential for flexible electronics, memory, and neuromorphic computing applications. Here, we report on a physics-based efficient device model for Fe-TFTs that effectivel... » read more

Review Paper: Challenges Required To Bring the Energy Consumption Down in Microelectronics (Rice, UC Berkeley, Georgia Tech, Et al.)
By Technical Paper Link - 06 Oct, 2024 - Comments: 0

A new review article titled "Roadmap on low-power electronics" by researchers at Rice University, UC Berkeley, Georgia Tech, TSMC, Intel, Harvard, et al. This roadmap to energy efficient electronics written by numerous collaborators covers materials, modeling, architectures, manufacturing, metrology and more. Find the technical paper here. September 2024. Ramamoorthy Ramesh, Sayeef Sal... » read more

Ambipolar Schottky-based FeFET For Ultrascaled Memory Applications
By Technical Paper Link - 06 Oct, 2024 - Comments: 0

A new technical paper titled "On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices" was published by researchers at Global TCAD Solutions, Igor Sikorsky Kyiv Polytechnic Institute, INSA Lyon, and NaMLab. "Here, we promote an ambipolar Schottky-based ferroelectric transistor (AS-FeFET) as an alternative design. We demonstr... » read more

Preparing For Ferroelectric Devices
By Katherine Derbyshire - 02 Oct, 2024 - Comments: 0

The discovery of ferroelectricity in materials that are compatible with integrated circuit manufacturing has sparked a wave of interest in ferroelectric devices. Ferroelectrics are materials with a permanent polarization, the direction of which can be switched by an applied field. This polarization can be used to raise or lower the threshold voltage of a transistor, as in FeFETs, or it can c... » read more

Ferroelectric Memory-Based IMC for ML Workloads
By Technical Paper Link - 21 May, 2024 - Comments: 0

A new technical paper titled "Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads" was published by researchers at Purdue University. Abstract "This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate mach... » read more

Tapping 2D van der Waals Ferroelectrics For Use In Next-Generation Electronics
By Technical Paper Link - 05 Dec, 2023 - Comments: 0

A technical paper titled “Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics” was published by researchers at Rice University, Massachusetts Institute of Technology, University of Texas at Arlington, Texas A&M University, and Pennsylvania State University. Abstract: "Van der Waals (vdW) ferroelectrics have attracted significant attention for their pot... » read more

Ferroelectric Polarization in an Elementary Substance or Single-Element Compound
By Technical Paper Link - 09 Apr, 2023 - Comments: 0

A technical paper titled "Two-dimensional ferroelectricity in a single-element bismuth monolayer" was published by researchers at National University of Singapore, Zhejiang University, Tianjin University, and University of Chinese Academy of Sciences. Abstract "Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversi... » read more

Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
By Technical Paper Link - 10 Mar, 2023 - Comments: 0

A new technical paper titled "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT" was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable,” That means it can function as several devices, such as one amplifier working as several amplifiers that we can dynamically control. This allows us to reduce the circuit area and lower the... » read more

Nanoscale (5nm) Ferroelectric Semiconductor (University of Michigan)
By Technical Paper Link - 08 Feb, 2023 - Comments: 0

A new technical paper titled "Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy" was published by researchers at University of Michigan, with DARPA funding. "Ferroelectric semiconductors stand out from others because they can sustain an electrical polarization, like the electric version of magnetism. But unlike a fridge magn... » read more

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