tag: ferroelectric

Ambipolar Schottky-based FeFET For Ultrascaled Memory Applications
By Technical Paper Link - 06 Oct, 2024 - Comments: 0

A new technical paper titled "On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices" was published by researchers at Global TCAD Solutions, Igor Sikorsky Kyiv Polytechnic Institute, INSA Lyon, and NaMLab. "Here, we promote an ambipolar Schottky-based ferroelectric transistor (AS-FeFET) as an alternative design. We demonstr... » read more

Preparing For Ferroelectric Devices
By Katherine Derbyshire - 02 Oct, 2024 - Comments: 0

The discovery of ferroelectricity in materials that are compatible with integrated circuit manufacturing has sparked a wave of interest in ferroelectric devices. Ferroelectrics are materials with a permanent polarization, the direction of which can be switched by an applied field. This polarization can be used to raise or lower the threshold voltage of a transistor, as in FeFETs, or it can c... » read more

Ferroelectric Memory-Based IMC for ML Workloads
By Technical Paper Link - 21 May, 2024 - Comments: 0

A new technical paper titled "Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads" was published by researchers at Purdue University. Abstract "This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate mach... » read more

Tapping 2D van der Waals Ferroelectrics For Use In Next-Generation Electronics
By Technical Paper Link - 05 Dec, 2023 - Comments: 0

A technical paper titled “Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics” was published by researchers at Rice University, Massachusetts Institute of Technology, University of Texas at Arlington, Texas A&M University, and Pennsylvania State University. Abstract: "Van der Waals (vdW) ferroelectrics have attracted significant attention for their pot... » read more

Ferroelectric Polarization in an Elementary Substance or Single-Element Compound
By Technical Paper Link - 09 Apr, 2023 - Comments: 0

A technical paper titled "Two-dimensional ferroelectricity in a single-element bismuth monolayer" was published by researchers at National University of Singapore, Zhejiang University, Tianjin University, and University of Chinese Academy of Sciences. Abstract "Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversi... » read more

Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
By Technical Paper Link - 10 Mar, 2023 - Comments: 0

A new technical paper titled "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT" was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable,” That means it can function as several devices, such as one amplifier working as several amplifiers that we can dynamically control. This allows us to reduce the circuit area and lower the... » read more

Nanoscale (5nm) Ferroelectric Semiconductor (University of Michigan)
By Technical Paper Link - 08 Feb, 2023 - Comments: 0

A new technical paper titled "Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy" was published by researchers at University of Michigan, with DARPA funding. "Ferroelectric semiconductors stand out from others because they can sustain an electrical polarization, like the electric version of magnetism. But unlike a fridge magn... » read more

MAC Operation on 28nm High-k Metal Gate FeFET-based Memory Array with ADC (Fraunhofer IPMS/GF)
By Technical Paper Link - 01 Dec, 2022 - Comments: 0

A technical paper titled "Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array" was published by researchers at Fraunhofer IPMS and GlobalFoundries. Abstract "This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide Semiconductor (CMOS) and ferroelectric fi... » read more

Stabilizing A Hafnium Oxide-Based Thin Film When Sandwiched Between A Metal Substrate And An Electrode
By Technical Paper Link - 17 Nov, 2022 - Comments: 0

A technical paper titled "Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films" was published by researchers at University of Virginia, Brown University, Sandia National Labs, and Oak Ridge National Lab. Funding was given by U.S. DOE's 3D Ferroelectric Microelectronics Energy Frontier Research Center and the SRC. "This study ... » read more

Multi-Bit In-Memory Computing System for HDC using FeFETs, Achieving SW-Equivalent-Accuracies
By Technical Paper Link - 11 Nov, 2022 - Comments: 0

A new technical paper titled "Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing" by researchers at University of Notre Dame, Fraunhofer Institute for Photonic Microsystems, University of California Irvine, and Technische Universität Dresden. "We present a multi-bit IMC system for HDC using ferroelectric field-effect transistor... » read more

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