Exploiting Domain Wall Conduction in Nitride Ferroelectrics As A New Type of Memristive FeRAM (Kiel Univ., Fraunhofer, NaMLab, TU Dresden)


A new technical paper titled "Nitride Ferroelectric Domain Wall Memory for Next-Generation Computing" was published by researchers at Kiel University, Fraunhofer Institute for Silicon Technology (ISIT), NaMLab, and TU Dresden. Abstract "The emerging nitride ferroelectrics, such as Al1-xScxN promise to significantly advance our current information technology. In particular, two-terminal mem... » read more

Emerging Synaptic Memory Technologies For Neuromorphic CIM Platforms (Tampere Univ.)


A new technical paper titled "Toward Capacitive In-Memory-Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware" was published by researchers at Tampere University. Abstract: "The quest for energy-efficient, scalable neuromorphic computing has elevated compute-in-memory (CIM) architectures to the forefront of hardware innovation. While memristive... » read more

Modulation of the Inner Gate Length in MFMIS NSFETs To Achieve Big Gains in Memory Window (Samsung, Seoul National Univ.)


A new technical paper titled "Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes" was published by researchers at Samsung and Seoul National University. Abstract "This work proposes a new way of lowering the area ratio (AR) between the ferroelectric and metal-oxide-semiconductor (MOS) regions of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ... » read more

Design Optimization Techniques To Improve NC-CFET Performance


A new technical paper titled "Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This work assesses and analyzes negative-capacitance CFETs (NC-CFETs) with metal-ferroelectric-insulator-semiconductor (MFIS) and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) configu... » read more

Domain Wall Fluctuations in Sliding Ferroelectrics (Cambridge, Argonne)


A new technical paper titled "Superconductivity from Domain Wall Fluctuations in Sliding Ferroelectrics" was published by researchers at University of Cambridge and Argonne National Lab. Abstract: "Bilayers of two-dimensional van der Waals materials that lack an inversion center can show a novel form of ferroelectricity, where certain stacking arrangements of the two layers lead to an inter... » read more

Promising Materials Beyond Silicon (TI, AIXTRON, imec)


A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

Schottky Barrier Transistors Roadmap (Univ. of Surrey, NaMLab, PGI et al.)


A new technical paper titled "Roadmap for Schottky Barrier Transistors" was published by researchers at University of Surrey, NaMLab gGmbH, Forschungszentrum Jülic, Peter Grünberg Institute, et al. Abstract: "In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier, as an asset ... » read more

Energy Storage: Properties of Barium Titanate (Harvey Mudd)


A technical paper titled "Understanding surfaces and interfaces in nanocomposites of silicone and barium titanate through experiments and modeling" was published by researchers at Harvey Mudd College, Sandia National Lab and Air Force Research Laboratory. Abstract "Barium titanate (BTO) is a ferroelectric perovskite used in electronics and energy storage systems because of its high dielectr... » read more

Physics-Based Efficient Device Model for Fe-TFTs (Univ. of Florida)


A new technical paper titled "An efficient device model for ferroelectric thin-film transistors" was published by researchers at University of Florida. Abstract "Ferroelectric thin-film transistors (Fe-TFTs) have promising potential for flexible electronics, memory, and neuromorphic computing applications. Here, we report on a physics-based efficient device model for Fe-TFTs that effectivel... » read more

Review Paper: Challenges Required To Bring the Energy Consumption Down in Microelectronics (Rice, UC Berkeley, Georgia Tech, Et al.)


A new review article titled "Roadmap on low-power electronics" by researchers at Rice University, UC Berkeley, Georgia Tech, TSMC, Intel, Harvard, et al. This roadmap to energy efficient electronics written by numerous collaborators covers materials, modeling, architectures, manufacturing, metrology and more. Find the technical paper here. September 2024. Ramamoorthy Ramesh, Sayeef Sal... » read more

← Older posts