Impact of the Gate and Fin Space Variation on Stress Modulation and FinFET Transistor Performance


Device scaling in advanced CMOS nodes is becoming more difficult due to patterning limitations and complex 3-D transistor integration schemes. This also makes the devices more sensitive to patterning variability. The presented study investigates the impact of poly pitch and fin pitch variability on stress-induced performance variation in 7nm FinFET transistors. Variations in critical dimension ... » read more

Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond


In 5nm FinFET technology and beyond, SRAM cell size reduction to 6 tracks is required with a fin pitch of 24nm. Fin depopulation is mandatory to enable area scaling, but it becomes challenging at small pitches. In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and pr... » read more

Re-Engineering The FinFET


The semiconductor industry is still in the early stages of the [getkc id="185" kc_name="finFET"] era, but the [getkc id="26" kc_name="transistor"] technology already is undergoing a dramatic change. The fins themselves are getting a makeover. In the first-generation finFETs, the fins were relatively short and tapered. In the next wave, the fins are expected to get taller, thinner and more re... » read more