What’s ST’s FD-SOI Technology All About?

By Various Writers - 22 Jun, 2012 - Comments: 0

As I blogged here on SemiMD last week, STMicroelectronics has announced that to supplement in-house production at their fab in Crolles, the company has tapped GlobalFoundries for high-volume production of 28nm then 20nm FD-SOI mobile devices. ST will also open access to its FD-SOI technology to GlobalFoundries’ other customers. High-volume manufacturing will kick off with ST-Ericsson’s ... » read more

GloFo to Fab 28/20nm FD-SOI for ST; ST Tech Open to GF Customers

By Various Writers - 15 Jun, 2012 - Comments: 0

Two big pieces of news have recently been announced by STMicroelectronics: to supplement in-house production at Crolles, the company has tapped GlobalFoundries for high-volume production of 28nm then 20nm FD-SOI mobile devices; ST will open access to its FD-SOI technology to GlobalFoundries’ other customers. The high-volume manufacturing will kick off with ST-Ericsson’s ARM-based 2... » read more

Soitec’s Wafer Roadmap for Fully Depleted Planar and 3D/FinFET

By Various Writers - 24 May, 2012 - Comments: 0

The following is a special guest post by Steve Longoria, Senior VP of Worldwide Business Development at Soitec. It first appeared as part of the Advanced Substrate News special edition on FD-SOI industrialization. ~~ Today’s semiconductor industry is moving through several challenging transitions that are creating a significant opportunity for Soitec to bring incremental value to th... » read more

ST-Ericsson 28nm FD-SOI smartphone SOC, Q3 tape-out (interview)

By Various Writers - 24 Apr, 2012 - Comments: 0

ASN recently had a chance to talk to ST-Ericsson’s Chief Chip Architect Louis Tannyeres about the move to 28nm FD-SOI for smartphones and tablet SOCs. Take-away message: FD-SOI solves – with less process complexity – scaling, leakage and variability issues to further shrink CMOS technology beyond 28nm. Here's what he said. ~~ [caption id="attachment_441" align="alignleft" wi... » read more

FD-SOI – Recent Consortium Results (Part 1 of 3): Manufacturing

By Various Writers - 05 Mar, 2012 - Comments: 0

The most recent SOI Consortium benchmarking study regarding 28nm and 20nm FD-SOI results (silicon-calibrated simulations at the 28nm node of complex circuits including ARM cores and DDR3 memory controllers) covered a lot of ground. This post is part 1 of a 3-part blog series that will be highlighting key points with respect to: 1. manufacturing; 2. power & performance; 3. 20nm benchmarking ... » read more

32nm SOI is GloFo Fab 8′s 1st Silicon

By Various Writers - 18 Jan, 2012 - Comments: 0

Excellent news for the fast-growing SOI community: the first chips produced at GlobalFoundries’ “Fab 8″ in upstate New York are based on IBM’s latest, 32nm SOI chip technology. In a joint press release, the two companies announced that the chips will be used by customers in networking, gaming and graphics. While the new chips began initial production at IBM’s 300mm fab in East... » read more

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