Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

Non-Traditional Design of Dynamic Logic Gates and Circuits with FDSOI FETs

A new technical paper titled "Non-Traditional Design of Dynamic Logics using FDSOI for Ultra-Efficient Computing" was published by researchers at University of Stuttgart, UC Berkeley, Indian Institute of Technology Kanpur, and TU Munich, with funding by the German Research Foundation. Abstract "In this paper, we propose a non-traditional design of dynamic logic circuits using Fully-Deplet... » read more