tag: gallium nitride

GaN Power Devices: Stability, Reliability and Robustness Issues
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Power Semiconductors: A Deep Dive Into Materials, Manufacturing & Business
By The SE Staff - 03 Apr, 2023 - Comments: 0

Whether you’re the owner of the average smartphone, commuting on trains, or driving around in a Tesla, you use power semiconductor devices every day. In a technology-dependent world, these devices are everywhere, and demand for more types of chips using different materials is growing. In the past, most engineers paid little attention to power semiconductors. They were deemed commodity, off... » read more

Unleashing the Potential of Compound Semiconductors: Industry Leaders Collaborate at SEMICON Taiwan 2022 to Create Ecosystem
By Ashley Huang - 16 Mar, 2023 - Comments: 0

Delivering high-speed processing over 100 times faster than silicon, compound semiconductors have made the devices a magnet for developers of leading-edge technologies out to maximize performance in key segments including automotive, data centers and communications. With the rising profile of compound semiconductors as the backdrop, leading experts gathered at the Power and Opto Semiconductor F... » read more

Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
By Technical Paper Link - 10 Mar, 2023 - Comments: 0

A new technical paper titled "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT" was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable,” That means it can function as several devices, such as one amplifier working as several amplifiers that we can dynamically control. This allows us to reduce the circuit area and lower the... » read more

A Star Is Born: Gallium Nitride And The Coming Age Of Compound Semiconductors
By Wei Zhao - 07 Feb, 2023 - Comments: 0

Not so long ago, Blu-ray was hailed as a technological advancement in the world of digital video. But in the streaming era, Blu-ray’s luster has faded. However, the technology responsible for the blue laser diode that gave the Blu-ray player its name – gallium nitride (GaN) – is emerging as one of a number of exciting new developments in the semiconductor industry. Today, GaN is used b... » read more

High Voltage Testing Races Ahead
By Karen Heyman - 06 Dec, 2022 - Comments: 1

Voltage requirements are increasing, especially for the EV market. Even devices that might be considered relatively low voltage, such as display drivers, are now pushing past established baselines. While working with high voltages is nothing new — many engineers can recall yellow caution tape in their workplaces — the sheer number and variety of new requirements have made testing at high... » read more

Equipment Suppliers Brace For GaN Market Explosion
By Adele Hars - 18 Aug, 2022 - Comments: 0

A huge GaN market is opening up, driven by consumer devices and the need for greater energy efficiency across many applications. Suppliers are ready, but to fully compete with SiC in high-voltage automotive applications will require further technological developments in power GaN (gallium nitride). Still, the 2020s mark a very high-growth phase for GaN markets. Revenues in the power GaN mark... » read more

GaN 8Gbps High-Speed Relay MMIC For Automated Test Equipment
By Advantest - 09 Aug, 2022 - Comments: 0

An 8 Gbps high-speed relay MMIC for an Automated Test Equipment (ATE) using a gallium nitride is developed and evaluated. Metal-Insulator-Semiconductor structure with a tantalum oxynitride is employed to reduce a leakage current for ATE applications. The fabricated MMIC shows 0.3 nA of the leakage current, 12 GHz of a －3 dB bandwidth, and excellent eye-opening of 8 Gbps signals with a 18-lead... » read more

Power/Performance Bits: June 28
By Jesse Allen - 28 Jun, 2022 - Comments: 0

Making uniform wafers Scientists from the Korea Institute of Machinery & Materials (KIMM) and Nanyang Technological University Singapore (NTU Singapore) propose a technique that combines nanotransfer printing with metal-assisted chemical etching to improve wafer uniformity and increase yield. The researchers used a chemical-free nanotransfer printing technique that transfers gold nanost... » read more

ORNL: Advantages of Using Wide Bandgap Semiconductor Materials For Extreme Temp & Radiation
By Technical Paper Link - 13 Jun, 2022 - Comments: 0

Research paper from ORNL (Oak Ridge National Lab) titled "Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments." Abstract "With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors hav... » read more

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