Four Vertical Power Delivery Architectures For Emerging Packaging and Integration Platforms (UIC)


A technical paper titled “Vertical Power Delivery for Emerging Packaging and Integration Platforms – Power Conversion and Distribution” was published by researchers at University of Illinois Chicago. Abstract: "Efficient delivery of current from PCB to point-of-load (POL) is a primary concern in modern high-power high-density integrated systems. Traditionally, a 48 V power signal is con... » read more

The Ultimate Guide To PCB Layout For GaN Transistors


In the ever-evolving landscape of power electronics, the emergence of gallium nitride (GaN) transistors has ignited a revolution by offering unparalleled benefits, including remarkable efficiency and power density enhancements. The art of PCB layout has been a crucial component in power electronic design for over four decades now, ever since the advent of switching power supplier. From the ea... » read more

Noise Parameter Survey Of Millimeter Wave GaN HEMT Technologies


A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE Systems, Pseudolithic, Northrop Grumman Corporation, and University of California Santa Barbara. "This article presents a set of measured benchmarks for the noise and gain performance of si... » read more

Improving ML-Based Device Modeling Using Variational Autoencoder Techniques


A technical paper titled “Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques” was published by researchers at Commonwealth Scientific and Industrial Research Organisation (CSIRO), Peking University, National University of Singapore, and University of New South Wales. Abstract: "The semiconductors industry benefits greatly from the integ... » read more

Wide Bandgap Semiconductors: What Modeling Challenges Must We Overcome


As power electronics shrink in size, the demands on power, frequency, and efficiency grow exponentially. The semiconductor industry is leaning heavily into wide bandgap materials like gallium nitride (GaN) and silicon carbide (SiC) to help meet these demands. Recent research projects that the global GaN semiconductor devices market will grow at a CAGR of 25.4% from 2023 to 2030. However, the ... » read more

Ramping Up Power Electronics For EVs


The rapid acceleration of the power devices used in electric vehicles (EVs) is challenging chipmakers to adequately screen the ICs that power these vehicles.[1] While progress toward autonomous driving is grabbing the public’s attention, the electrification of transportation systems is progressing quietly. For the automotive industry, this shift involves a mix of electronic components. Amo... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues


A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Power Semiconductors: A Deep Dive Into Materials, Manufacturing & Business


Whether you’re the owner of the average smartphone, commuting on trains, or driving around in a Tesla, you use power semiconductor devices every day. In a technology-dependent world, these devices are everywhere, and demand for more types of chips using different materials is growing. In the past, most engineers paid little attention to power semiconductors. They were deemed commodity, off... » read more

Unleashing the Potential of Compound Semiconductors: Industry Leaders Collaborate at SEMICON Taiwan 2022 to Create Ecosystem


Delivering high-speed processing over 100 times faster than silicon, compound semiconductors have made the devices a magnet for developers of leading-edge technologies out to maximize performance in key segments including automotive, data centers and communications. With the rising profile of compound semiconductors as the backdrop, leading experts gathered at the Power and Opto Semiconductor F... » read more

Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)


A new technical paper titled "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT" was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable,” That means it can function as several devices, such as one amplifier working as several amplifiers that we can dynamically control. This allows us to reduce the circuit area and lower the... » read more

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