Improving ML-Based Device Modeling Using Variational Autoencoder Techniques


A technical paper titled “Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques” was published by researchers at Commonwealth Scientific and Industrial Research Organisation (CSIRO), Peking University, National University of Singapore, and University of New South Wales.


“The semiconductors industry benefits greatly from the integration of machine learning (ML)-based techniques in technology computer-aided design (TCAD) methods. The performance of ML models, however, relies heavily on the quality and quantity of training datasets. They can be particularly difficult to obtain in the semiconductor industry due to the complexity and expense of the device fabrication. In this article, we propose a self-augmentation strategy for improving ML-based device modeling using variational autoencoder (VAE)-based techniques. These techniques require a small number of experimental data points and do not rely on TCAD tools. To demonstrate the effectiveness of our approach, we apply it to a deep neural network (DNN)-based prediction task for the ohmic resistance value in gallium nitride (GaN) devices. A 70% reduction in mean absolute error (MAE) when predicting experimental results is achieved. The inherent flexibility of our approach allows easy adaptation to various tasks, thus making it highly relevant to many applications of the semiconductor industry.”

Find the technical paper here. Published August 2023.

Z. Wang et al., “Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques,” in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2023.3307051.

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