Highly Stacked Nanowire FETs To Enhance Drive Current And Transistor Density

A technical paper titled “Fabrication and performance of highly stacked GeSi nanowire field effect transistors” was published by researchers at National Taiwan University. Abstract: "Horizontal gate-all-around field effect transistors (GAAFETs) are used to replace FinFETs due to their good electrostatics and short channel control. Highly stacked nanowire channels are widely believed to en... » read more

Improving The Retention Characteristics Of 3D NAND Flash Memories

A technical paper titled “3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer” was published by researchers at Myongji University, Soongsil University, and Seoul National University. Abstract: "To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeat... » read more

Improving ML-Based Device Modeling Using Variational Autoencoder Techniques

A technical paper titled “Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques” was published by researchers at Commonwealth Scientific and Industrial Research Organisation (CSIRO), Peking University, National University of Singapore, and University of New South Wales. Abstract: "The semiconductors industry benefits greatly from the integ... » read more

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more