Highly Stacked Nanowire FETs To Enhance Drive Current And Transistor Density

By Technical Paper Link - 10 Nov, 2023 - Comments: 0

A technical paper titled “Fabrication and performance of highly stacked GeSi nanowire field effect transistors” was published by researchers at National Taiwan University. Abstract: "Horizontal gate-all-around field effect transistors (GAAFETs) are used to replace FinFETs due to their good electrostatics and short channel control. Highly stacked nanowire channels are widely believed to en... » read more

Improving The Retention Characteristics Of 3D NAND Flash Memories

By Technical Paper Link - 31 Oct, 2023 - Comments: 0

A technical paper titled “3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer” was published by researchers at Myongji University, Soongsil University, and Seoul National University. Abstract: "To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeat... » read more

Improving ML-Based Device Modeling Using Variational Autoencoder Techniques

By Technical Paper Link - 27 Sep, 2023 - Comments: 0

A technical paper titled “Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques” was published by researchers at Commonwealth Scientific and Industrial Research Organisation (CSIRO), Peking University, National University of Singapore, and University of New South Wales. Abstract: "The semiconductors industry benefits greatly from the integ... » read more

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

By Technical Paper Link - 19 Sep, 2023 - Comments: 0

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

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tag: technology computer-aided design

Highly Stacked Nanowire FETs To Enhance Drive Current And Transistor Density

Improving The Retention Characteristics Of 3D NAND Flash Memories

Improving ML-Based Device Modeling Using Variational Autoencoder Techniques

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

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Shift Left Is The Tip Of The Iceberg

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tag: technology computer-aided design

Highly Stacked Nanowire FETs To Enhance Drive Current And Transistor Density

Improving The Retention Characteristics Of 3D NAND Flash Memories

Improving ML-Based Device Modeling Using Variational Autoencoder Techniques

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

Trending Articles

Shift Left Is The Tip Of The Iceberg

NAND Flash Targets 1,000 Layers

One Chip Vs. Many Chiplets

FOPLP Gains Traction in Advanced Semiconductor Packaging

HBM Options Increase As AI Demand Soars

Knowledge Centers Entities, people and technologies explored

Related Articles

Shift Left Is The Tip Of The Iceberg

Partitioning In The Chiplet Era

NAND Flash Targets 1,000 Layers

3.5D: The Great Compromise

AI’s Role In Chip Design Widens, Drawing In New Startups

What Comes After HBM For Chiplets

Memory Fundamentals For Engineers

New AI Processors Architectures Balance Speed With Efficiency

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