tag: gallium nitride

System Bits: Sept. 6
By Ann Mutschler - 06 Sep, 2016 - Comments: 0

How might AI affect urban life in 2030? In an ongoing project hosted by Stanford University to inform societal deliberation and provide guidance on the ethical development of smart software, sensors and machines, a panel of academic and industrial thinkers has looked ahead to 2030 to forecast how advances in artificial intelligence (AI) might affect life in a typical North American city. Th... » read more

RF GaN Gains Steam
By Mark LaPedus - 25 Jul, 2016 - Comments: 0

The RF [getkc id="217" kc_name="gallium nitride"] (GaN) device market is heating up amid the need for more performance with better power densities in a range of systems, such as infrastructure equipment, missile defense and radar. On one front, for example, RF GaN is beginning to displace a silicon-based technology for the power amplifier sockets in today’s wireless base stations. GaN is m... » read more

Predictions For 2016: Semiconductors, Manufacturing And Design
By Brian Bailey - 21 Jan, 2016 - Comments: 0

Seventeen companies sent in their predictions for this year with some of them sending predictions from several people. This is in addition to the CEO predictions that were recently published. That is a fine crop of views for the coming year, especially since they know that they will be held accountable for their views and this year, just like the last, they will have to answer for them. We beli... » read more

Power/Performance Bits: Dec. 23
By Jesse Allen - 23 Dec, 2015 - Comments: 0

GaN building blocks A team of engineers from Cornell University, the University of Notre Dame, and the semiconductor company IQE created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches. In spite of having many desirable features as a material, GaN is notorious for its defects and reliability issues. So the team zeroed in on device... » read more

Manufacturing Of Next-Generation Channel Materials
By Michael Watts - 05 Oct, 2015 - Comments: 0

One of the many challenges for the IC developers is to change the channel material to increase transistor mobility. But what about manufacturing? Can LED-style epitaxy be migrated to high-volume silicon manufacturing? “The use of Ge and InGaAs quantum wells is an extension of the current strained Si strategy," said Aaron Thean, vice president of process technologies and director of the log... » read more

Chasing After Quantum Dots
By Mark LaPedus - 21 Sep, 2015 - Comments: 2

In the 1980s, researchers stumbled upon a tiny particle or nanocrystal with unique electrical properties. These mysterious nanocrystals, which are based on semiconductor materials, were later named quantum dots. Quantum dots were curiosity items until 2013, when Sony launched the world’s first LCD TV using these inorganic semiconductor nanocrystals. Basically, when inserted into an LCD TV,... » read more

Bigger, Brighter TVs
By Mark LaPedus - 24 Jul, 2015 - Comments: 0

The flat panel display (FPD) industry is undergoing a renaissance, with suppliers rolling out a dizzying array of new, high-resolution technologies for mobile devices, computers and TVs. But despite being in the eye of the innovation storm, FPD equipment makers remain cautious—and for good reason. There are a slew of new LCD fabs being built today, mostly in China. This, in turn, is promp... » read more

5 Technologies To Watch
By Mark LaPedus - 23 Jul, 2015 - Comments: 0

The industry is developing a dizzying array of new technologies. In fact, there are more new and innovative technologies than ever before. And the list is countless. At least from my vantage point, I have come up with my own list of the top five technologies to watch in 2015 and beyond. They are listed in alphabetical order. (See below). Obviously, there are more than just five technologi... » read more

The Interconnected Web Of Power
By Brian Bailey - 12 Mar, 2015 - Comments: 0

Tradeoffs between area and timing used to follow fairly simple rules. You could improve timing by adding area, and occasionally find an architectural solution that would decrease both at the same time. With physical synthesis the relationship became a little more complicated because an increase in area, say to make a drive larger or add another buffer, might upset the layout. That, in turn, cou... » read more

GaN Manufacturing Meets Big Silicon
By Michael Watts - 20 Feb, 2015 - Comments: 0

I have been talking about GaN on Silicon for several years because it offers a path to cost reduction in LED’s in the same way as silicon semiconductors. This year at Photonics West 2015, Aixtron presented its next generation 6-inch wafer system with all the automation that the semiconductor guys expect to be able to build GaN power transistors. The systems are configured as cluster tools... » read more

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