Manufacturing Bits: Jan. 5

By Mark LaPedus - 05 Jan, 2021 - Comments: 0

Gallium oxide chips The National Renewable Energy Laboratory (NREL), the Colorado School of Mines, and Saint-Gobain Crystals have teamed up to develop manufacturing technologies and devices based on an emerging material called gallium oxide. This work is part of a three-year program, dubbed the Oxide Electronic Devices for Extreme Operating Environments project, which is funded by the U.S. ... » read more

Manufacturing Bits: Feb. 25

By Mark LaPedus - 25 Feb, 2020 - Comments: 0

Diamond finFETs HRL Laboratories has made new and significant progress to develop diamond finFETs. HRL, a joint R&D venture between Boeing and General Motors, has developed a new ohmic regrowth technique for diamond FETs. This in turn could pave the way towards commercial diamond FETs. Applications include spacecraft, satellites and systems with extreme temperatures. Still in R&D, diamo... » read more

Manufacturing Bits: Dec. 23

By Mark LaPedus - 23 Dec, 2019 - Comments: 0

Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

Manufacturing Bits: Sept. 3

By Mark LaPedus - 03 Sep, 2019 - Comments: 1

Modeling SiC defects The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). Defectivity is an issue for SiC, a compound semiconductor material based on silicon and carbon. Today, SiC is used to make specialized power semiconductors for high-voltage applications, such as electric ... » read more

Manufacturing Bits: April 10

By Mark LaPedus - 10 Apr, 2018 - Comments: 1

Higher power GaN Imec and Qromis have announced the development of a new gallium nitride (GaN) substrate technology that enables power devices at 650 volts and above. GaN is an emerging technology for power semiconductor applications. Based on a GaN-on-silicon technology, GaN-based power semis operate at 650 volts and above. In simple terms, the buffer layers between the GaN device and the ... » read more

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tag: gallium oxide

Manufacturing Bits: Jan. 5

Manufacturing Bits: Feb. 25

Manufacturing Bits: Dec. 23

Manufacturing Bits: Sept. 3

Manufacturing Bits: April 10