Research Bits: August 29

Resistive switching with hafnium oxide Researchers from the University of Cambridge, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo used hafnium oxide to build a resistive switching memory device that processes data in a similar way as the synapses in the human brain. At the atomic level, hafnium oxide has no structure, with the hafni... » read more

Gallium Oxide Flash Memory (KAUST & IIT)

A technical paper titled "Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics" was published by researchers at King Abdullah University of Science and Technology (KAUST) and Indian Institute of Technology. Abstract: "This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film... » read more

Power Semiconductors: A Deep Dive Into Materials, Manufacturing & Business

Whether you’re the owner of the average smartphone, commuting on trains, or driving around in a Tesla, you use power semiconductor devices every day. In a technology-dependent world, these devices are everywhere, and demand for more types of chips using different materials is growing. In the past, most engineers paid little attention to power semiconductors. They were deemed commodity, off... » read more

The Physics Of Ferroelectrics

The physics of ferroelectric materials is a large topic — too large for comprehensive coverage in a single article. While researching my recent article on negative capacitance, I found a number of papers that might be of interest to readers seeking more depth. Researchers in Japan used ferroelectric BiFeO3 to control the behavior of CaMnO3, a Mott insulator. Changing the polarization of th... » read more

Designing And Securing Chips For Outer Space

Design considerations for hardware used in space go far beyond radiation hardening. These devices have to perform flawlessly for years, under extreme temperature variations, and potentially banged up by space junk or other particles floating in the void over its projected lifetime. Reliability in space adds a whole different set of design considerations. For example, while it's unlikely anyo... » read more

ORNL: Advantages of Using Wide Bandgap Semiconductor Materials For Extreme Temp & Radiation

Research paper from ORNL (Oak Ridge National Lab) titled "Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments." Abstract "With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors hav... » read more

Gallium Oxide Power Electronic Roadmap

New research paper addressing challenges in using gallium oxide. ABSTRACT "Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Du... » read more

Manufacturing Bits: Jan. 3

Gallium oxide chips Looking to commercialize a promising ultra wide-bandgap technology in the market, Novel Crystal Technology (NCT) has developed a Schottky barrier diode based on a material called gallium oxide. NCT devised an ampere-class 1,200-V diode based on gallium oxide. A diode is a device that passes electricity in one direction and blocks it in the opposite direction. Still in R&... » read more

Gearing Up For Next-Gen Power Semis

After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Manufacturing Bits: Jan. 5

Gallium oxide chips The National Renewable Energy Laboratory (NREL), the Colorado School of Mines, and Saint-Gobain Crystals have teamed up to develop manufacturing technologies and devices based on an emerging material called gallium oxide. This work is part of a three-year program, dubbed the Oxide Electronic Devices for Extreme Operating Environments project, which is funded by the U.S. ... » read more

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