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ORNL: Advantages of Using Wide Bandgap Semiconductor Materials For Extreme Temp & Radiation


Research paper from ORNL (Oak Ridge National Lab) titled "Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments." Abstract "With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors hav... » read more

Gallium Oxide Power Electronic Roadmap


New research paper addressing challenges in using gallium oxide. ABSTRACT "Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Du... » read more

Manufacturing Bits: Jan. 3


Gallium oxide chips Looking to commercialize a promising ultra wide-bandgap technology in the market, Novel Crystal Technology (NCT) has developed a Schottky barrier diode based on a material called gallium oxide. NCT devised an ampere-class 1,200-V diode based on gallium oxide. A diode is a device that passes electricity in one direction and blocks it in the opposite direction. Still in R&... » read more

Gearing Up For Next-Gen Power Semis


After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Manufacturing Bits: Jan. 5


Gallium oxide chips The National Renewable Energy Laboratory (NREL), the Colorado School of Mines, and Saint-Gobain Crystals have teamed up to develop manufacturing technologies and devices based on an emerging material called gallium oxide. This work is part of a three-year program, dubbed the Oxide Electronic Devices for Extreme Operating Environments project, which is funded by the U.S. ... » read more

Manufacturing Bits: Feb. 25


Diamond finFETs HRL Laboratories has made new and significant progress to develop diamond finFETs. HRL, a joint R&D venture between Boeing and General Motors, has developed a new ohmic regrowth technique for diamond FETs. This in turn could pave the way towards commercial diamond FETs. Applications include spacecraft, satellites and systems with extreme temperatures. Still in R&D, diamo... » read more

Manufacturing Bits: Dec. 23


Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

Manufacturing Bits: Sept. 3


Modeling SiC defects The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). Defectivity is an issue for SiC, a compound semiconductor material based on silicon and carbon. Today, SiC is used to make specialized power semiconductors for high-voltage applications, such as electric ... » read more

Manufacturing Bits: April 10


Higher power GaN Imec and Qromis have announced the development of a new gallium nitride (GaN) substrate technology that enables power devices at 650 volts and above. GaN is an emerging technology for power semiconductor applications. Based on a GaN-on-silicon technology, GaN-based power semis operate at 650 volts and above. In simple terms, the buffer layers between the GaN device and the ... » read more