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ORNL: Advantages of Using Wide Bandgap Semiconductor Materials For Extreme Temp & Radiation

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Research paper from ORNL (Oak Ridge National Lab) titled “Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments.”

Abstract
“With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors have been increasing the efficiency and reducing the footprint of modern power electronics, and the increased electron mobility of gallium nitride semiconductors have been increasing the switching frequencies of radio frequency circuits. In extreme temperature (>225◦C) applications and high radiation environments such as low earth orbit, deep space, and terrestrial nuclear reactors, siliconbased semiconductors degrade rapidly. Wide bandgap semiconductors are poised to disrupt the market for sensing, instrumentation, and communication circuitry in these hazardous environments by increasing the lifetime, safety, and reliability. This report outlines the advantages of using wide bandgap semiconductor materials in extreme temperature and radiation environments.”

Find the open access  technical paper here or here (PDF). Published March 2022.

Reed, Kyle, Goetz, Callie, Ericson, Nance, Sweeney, Dan, and Ezell, N Dianne. Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments. United States: N. p., 2022. Web. doi:10.2172/1856704.

Source: ORNL

 

Further reading:
Radiation Hardening Chips For Outer Space
Preventing damage caused by cosmic particles, from the upper atmosphere to deep space.
IC Materials For Extreme Conditions
NASA looks to SiC and diamond for Venus electronics.
Visit Semiconductor Engineering’s Technical Paper library here and discover many more chip industry academic papers.



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