How To Use S-Parameters For Power Module Verification


By Wilfried Wessel (Siemens EDA), Simon Liebetegger (University of Applied Sciences Darmstadt), and Florian Bauer (Siemens EDA) Power modules are high-power switching circuits that convert DC- in AC-currents in electric vehicles, renewable energy, and many more applications. New materials [14] and device technologies [14], such as wide bandgap semiconductors, including silicon carbide (SiC) ... » read more

ORNL: Advantages of Using Wide Bandgap Semiconductor Materials For Extreme Temp & Radiation


Research paper from ORNL (Oak Ridge National Lab) titled "Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments." Abstract "With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors hav... » read more

Parasitic Characterization Comes To Power Design Simulation


Two power design challenges are taking teams into unfamiliar territory. Wide bandgap (WBG) semiconductors target greater efficiency and density. Stricter EMI compliance regulations now come standard in mission-critical industries. Power design practices are still catching up. Simulation often takes a back seat to respinning hardware prototypes until success. What’s missing that could make sim... » read more

Revving Up SiC And GaN


Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the demand for better tools to design, verify, and test these wide-bandgap devices. Both SiC and GaN are proving essential in areas such as battery management in electric vehicles. They can handle much ... » read more

Controlling The Reliability Of Silicon Carbide-Based Devices


The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher frequencies, and with higher breakdown voltage characteristics, SiC power transistors are quickly becoming an attractive silicon alternative for high power density and/or high-efficiency power conver... » read more