tag: GaN

The Chemistry Of Semiconductors
By Ed Sperling - 21 May, 2020 - Comments: 0

At each new process node, the chemistry of chip manufacturing has become much more complex than at previous nodes. But at 5nm and below, it's going to get orders of magnitude more complex. For the first few decades, the chemistry of chips was largely shielded from view for most of the industry. Caustic gases were relatively well understood because they are a potential health hazard, but the ... » read more

Power/Performance Bits: April 14
By Jesse Allen - 14 Apr, 2020 - Comments: 0

Undoped polymer ink Researchers at Linköping University, Chalmers University of Technology, University of Washington, University of Cologne, Chiba University, and Yunnan University developed an organic ink for printable electronics that doesn't need to be doped for good conductivity. "We normally dope our organic polymers to improve their conductivity and the device performance. The proces... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 06 Mar, 2020 - Comments: 0

Fab tools, materials and packaging Intel has recognized 37 companies for its annual suppliers’ awards. The list includes equipment, materials, packaging houses and other segments. These suppliers have collaborated with Intel to implement process improvements with good products and services. See who made the list here. ---------------------------------------- Lam Research has introduced... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 28 Feb, 2020 - Comments: 2

SPIE At the SPIE Advanced Lithography conference, Lam Research has introduced a new dry resist technology for extreme ultraviolet (EUV) lithography. Dry resist technology is a new approach to deposit and develop EUV resists. It is a dry deposition technique with alternate compositions and mechanisms. By combining Lam’s deposition and etch process expertise with partnerships with ASML a... » read more

Manufacturing Bits: Feb. 25
By Mark LaPedus - 25 Feb, 2020 - Comments: 0

Diamond finFETs HRL Laboratories has made new and significant progress to develop diamond finFETs. HRL, a joint R&D venture between Boeing and General Motors, has developed a new ohmic regrowth technique for diamond FETs. This in turn could pave the way towards commercial diamond FETs. Applications include spacecraft, satellites and systems with extreme temperatures. Still in R&D, diamo... » read more

MOCVD Vendors Eye New Apps
By Mark LaPedus - 20 Feb, 2020 - Comments: 0

Several equipment makers are developing or ramping up new metalorganic chemical vapor deposition (MOCVD) systems in the market, hoping to capture the next wave of growth applications in the arena. Competition is fierce among the various MOCVD equipment suppliers in the market, namely Aixtron, AMEC and Veeco. In addition, MOCVD equipment suppliers are looking for renewed growth in 2020, but b... » read more

SiC Foundry Business Emerges
By Mark LaPedus - 23 Jan, 2020 - Comments: 1

Several third-party foundry vendors are entering or expanding their efforts in the silicon carbide (SiC) business amid booming demand for the technology. However, making a significant dent in the market will not be so easy for SiC foundry vendors and their customers. They are facing stiff competition from traditional SiC device vendors such as Cree, Infineon, Rohm and STMicroelectronics. ... » read more

GaN on SiC: The Only Viable Long-Term Solution for 5G
By Wolfspeed, a Cree Company - 22 Jan, 2020 - Comments: 0

The 5G wave that’s been building for many years will finally come to shore in 2019. Early (but extremely limited) service rollouts will gain much fanfare and the first round of 5G-enabled devices will begin to hit markets. Wider commercial deployments, however, are still off in the distance and will be a slow but growing wave from 2020 to 2025. CCS Insight predicts 1 billion 5G users globally... » read more

Power/Performance Bits: Jan. 7
By Jesse Allen - 07 Jan, 2020 - Comments: 0

Ferroelectric FET Researchers at Purdue University developed a ferroelectric transistor capable of both processing and storing information. The ferroelectric semiconductor field-effect transistor is made of alpha indium selenide, which overcomes the problem of ferroelectric materials not interfacing well with silicon. “We used a semiconductor that has ferroelectric properties. This way tw... » read more

Manufacturing Bits: Dec. 31
By Mark LaPedus - 31 Dec, 2019 - Comments: 0

GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

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