tag: GaN

On The Reverse Breakdown Behavior Of GaAs PIN Diodes For High Power Applications
By Fraunhofer IIS/EAS - 11 Jan, 2023 - Comments: 0

In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices based on gallium arsenide for use in power electronics with comparable or better properties, but at lower costs. In this work, a first GaAs PIN diode... » read more

Designing And Securing Chips For Outer Space
By Marie C. Baca - 19 Dec, 2022 - Comments: 2

Design considerations for hardware used in space go far beyond radiation hardening. These devices have to perform flawlessly for years, under extreme temperature variations, and potentially banged up by space junk or other particles floating in the void over its projected lifetime. Reliability in space adds a whole different set of design considerations. For example, while it's unlikely anyo... » read more

High Voltage Testing Races Ahead
By Karen Heyman - 06 Dec, 2022 - Comments: 1

Voltage requirements are increasing, especially for the EV market. Even devices that might be considered relatively low voltage, such as display drivers, are now pushing past established baselines. While working with high voltages is nothing new — many engineers can recall yellow caution tape in their workplaces — the sheer number and variety of new requirements have made testing at high... » read more

Characterization Of HEMT Vias
By KLA - 08 Nov, 2022 - Comments: 0

The Zeta-Series optical profilers provide accurate measurement and automated analysis of high aspect ratio structures such as HEMT vias using non-destructive and high throughput metrology techniques.  Introduction Wide bandgap semiconductor materials are extremely attractive for use in power electronics, due to their performance capability at high temperature, power and frequency. Among wide... » read more

Production Testing Of Discrete Power Products
By Vineet Pancholi - 20 Oct, 2022 - Comments: 0

By Vineet Pancholi and Dennis Dinawanao Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged modules are some of the more popular discrete products. Switches control the flow of current within a circuit. MOSFETs are a building block of most electronic... » read more

Why Gas Sensing Is Becoming Localized
By SE Staff - 01 Sep, 2022 - Comments: 0

Sensors that measure air flow, air quality, and chemical makeup are being deployed increasingly for both indoor and outdoor environmental monitoring, in homes, automobiles, and industrial facilities. But despite a raft of new applications for these devices, the necessary standards needed to calibrate and compare those devices are trailing well behind rapid development of new types and combinati... » read more

MicroLEDs Move Toward Commercialization
By Laura Peters - 29 Aug, 2022 - Comments: 1

The market for MicroLED displays is heating up, fueled by a raft of innovations in design and manufacturing that can increase yield and reduce prices, making them competitive with LCD and OLED devices. MicroLED displays are brighter and higher contrast than their predecessors, and they are more efficient. Functional prototypes have been developed for watches, AR glasses, TVs, signage, and au... » read more

Equipment Suppliers Brace For GaN Market Explosion
By Adele Hars - 18 Aug, 2022 - Comments: 0

A huge GaN market is opening up, driven by consumer devices and the need for greater energy efficiency across many applications. Suppliers are ready, but to fully compete with SiC in high-voltage automotive applications will require further technological developments in power GaN (gallium nitride). Still, the 2020s mark a very high-growth phase for GaN markets. Revenues in the power GaN mark... » read more

GaN 8Gbps High-Speed Relay MMIC For Automated Test Equipment
By Advantest - 09 Aug, 2022 - Comments: 0

An 8 Gbps high-speed relay MMIC for an Automated Test Equipment (ATE) using a gallium nitride is developed and evaluated. Metal-Insulator-Semiconductor structure with a tantalum oxynitride is employed to reduce a leakage current for ATE applications. The fabricated MMIC shows 0.3 nA of the leakage current, 12 GHz of a －3 dB bandwidth, and excellent eye-opening of 8 Gbps signals with a 18-lead... » read more

ORNL: Advantages of Using Wide Bandgap Semiconductor Materials For Extreme Temp & Radiation
By Technical Paper Link - 13 Jun, 2022 - Comments: 0

Research paper from ORNL (Oak Ridge National Lab) titled "Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments." Abstract "With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors hav... » read more

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