tag: GlobalFoundries

Shootout At 28nm
By Ed Sperling - 15 May, 2014 - Comments: 0

By Ed Sperling & Mark LaPedus Samsung, Soitec and STMicroelectronics are joining forces on 28nm FD-SOI, creating a showdown with TSMC and others over the best single-patterned processes and materials and raising questions about how quickly companies need to move to the finFET technology generation. The multi-source manufacturing collaboration agreement for fully depleted silicon-on-insulato... » read more

The Bumpy Road To FinFETs
By Mark LaPedus - 15 May, 2014 - Comments: 2

The shift from planar transistors to finFETs is a major inflection point in the IC industry. FinFETs are expected to enable higher performance chips at lower voltages. And the next-generation transistor technology also could allow the industry to extend CMOS to the 10nm node and perhaps beyond. But as it turns out, finFET technology is also harder to master than previously thought. For exam... » read more

A Node By Any Other Name
By Barry Pangrle - 12 May, 2014 - Comments: 3

Have you ever wondered what gives a particular CMOS technology node its name? When we talk about 20nm, 16nm or 14nm, what exactly does that number in front of the “nm” mean anyway? Is it the first layer metal half-pitch or the gate length (and while we’re at it, is that the printed gate length, the physical gate length, or the effective gate length)? The half-pitch refers to half the m... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 09 May, 2014 - Comments: 0

Samsung Electronics announced that its memory fabrication line in Xi’an China has begun full-scale manufacturing operations. The new facility will manufacture Samsung’s advanced NAND flash memory chips, dubbed 3D V-NAND. A recent chemical leak at Intel’s fab in Arizona was contained and two workers were taken to a hospital for observation, according to reports. Apparently, Intel was i... » read more

FinFET Learning
By Ed Sperling - 08 May, 2014 - Comments: 0

FinFETs are not simple to work with. They’re difficult to manufacture, tricky to design, and they run the risk of greatly increased dynamic power density—particularly at 14/16nm, where extra margin is hard to justify—which affects everything from electromigration to signal integrity. Moreover, while finFETs have been on the drawing board for more than a decade, it’s taken four years ... » read more

Follow The Investments
By Ed Sperling - 24 Apr, 2014 - Comments: 0

Where is design heading over the next few years. The best way to tell that is to find out where the development dollars are going, and foundries and tools always precede actual designs. The foundries are starting to spend money—lots of it—on finFETs and 28nm. And while they’re talking about 2.5D and 3D, the money isn’t going there just yet. In fact, there are two different processes ... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 18 Apr, 2014 - Comments: 0

There is more evidence of a fab tool slowdown. In fact, ASML itself sounded the alarm during its earnings conference call this week. “ASML noted uncertainty regarding the timing of both the 16/14 nm finFET ramp at foundries (the company is seeing a delay from customers as the technology is still in development, in our view) and 3D NAND,” said Weston Twigg, an analyst from Pacific Crest Secu... » read more

Real Countries Have Fabs
By Ed Sperling - 17 Apr, 2014 - Comments: 3

Persistent rumblings about the sale of IBM’s semiconductor unit might have seemed absurd a couple decades ago—before IBM sold off its PC unit to Lenovo and lost the gaming chip business to AMD’s x86 chips—but no one is scoffing at the possibility these days. The reality is that IBM will never reach the volume necessary to be the No. 1 or No. 2 player in its segment. It’s not even i... » read more

Gaps In Metrology Could Impact Yield
By Mark LaPedus - 17 Apr, 2014 - Comments: 0

For some time, chipmakers have been developing new and complex chip architectures, such as 3D NAND, finFETs and stacked die. But manufacturing these types of chips is no simple task. It requires a robust fab flow to enable new IC designs with good yields. In fact, yield is becoming a more critical part of the flow. Yield is a broad term that means different things to different parts of the ... » read more

Time To Revisit 2.5D And 3D
By Mark LaPedus - 17 Apr, 2014 - Comments: 2

Chipmakers are reaching various and challenging inflection points. In logic, many IC makers face a daunting transition from planar transistors at 20nm to finFETs at 14nm. And on another front, the industry is nearing the memory bandwidth wall. So perhaps it’s time to look at new alternatives. In fact, chipmakers are taking a hard look, or re-examining, one alternative—stacked 2.5D/3D chi... » read more

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