Equipment Suppliers Brace For GaN Market Explosion

By Adele Hars - 18 Aug, 2022 - Comments: 0

A huge GaN market is opening up, driven by consumer devices and the need for greater energy efficiency across many applications. Suppliers are ready, but to fully compete with SiC in high-voltage automotive applications will require further technological developments in power GaN (gallium nitride). Still, the 2020s mark a very high-growth phase for GaN markets. Revenues in the power GaN mark... » read more

GaN ICs Wanted for Power, EV Markets

By Katherine Derbyshire - 17 Mar, 2022 - Comments: 0

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

Revving Up SiC And GaN

By Ann Mutschler - 13 Dec, 2021 - Comments: 0

Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the demand for better tools to design, verify, and test these wide-bandgap devices. Both SiC and GaN are proving essential in areas such as battery management in electric vehicles. They can handle much ... » read more

Gate Drive Solutions For CoolGaN 600 V HEMTs

By Infineon - 08 Jul, 2021 - Comments: 0

This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical applicat... » read more

Power Amp Wars Begin For 5G

By Mark LaPedus - 24 Aug, 2020 - Comments: 2

Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a key component that boosts the RF power signals in base stations. It's based on two competitive technologies, silicon-based LDMOS or RF gallium nitride (GaN). GaN, a III-V technology, outperforms ... » read more

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tag: HEMTs

Equipment Suppliers Brace For GaN Market Explosion

GaN ICs Wanted for Power, EV Markets

Revving Up SiC And GaN

Gate Drive Solutions For CoolGaN 600 V HEMTs

Power Amp Wars Begin For 5G