tag: high electron mobility transistor

Noise Parameter Survey Of Millimeter Wave GaN HEMT Technologies
By Technical Paper Link - 03 Oct, 2023 - Comments: 0

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE Systems, Pseudolithic, Northrop Grumman Corporation, and University of California Santa Barbara. "This article presents a set of measured benchmarks for the noise and gain performance of si... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
By Technical Paper Link - 04 Feb, 2022 - Comments: 0

Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

Manufacturing Bits: Jan. 21
By Mark LaPedus - 21 Jan, 2020 - Comments: 0

New high-frequency transistors The Fraunhofer Institute for Applied Solid State Physics IAF has developed a novel high-frequency transistor type—the metal oxide semiconductor HEMT or MOSHEMT. Still in R&D, Fraunhofer’s MOSHEMT has reached record frequencies of 640GHz. MOSHEMTs are designed for the 100GHz frequency ranges and above. Applications include communications, radar and sens... » read more

Power Semi Wars Begin
By Mark LaPedus - 23 Oct, 2019 - Comments: 1

Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market. Power semiconductors are specialized transistors that incorporate different and competitive technologies like GaN, SiC and silicon. Power semis operate as a switch in high-volt... » read more

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