High-NA EUVL: Automated Defect Inspection Based on SEMI-SuperYOLO-NAS

A new technical paper titled "Towards Improved Semiconductor Defect Inspection for high-NA EUVL based on SEMI-SuperYOLO-NAS" was published by researchers at KU Leuven, imec, Ghent University, and SCREEN SPE. Abstract "Due to potential pitch reduction, the semiconductor industry is adopting High-NA EUVL technology. However, its low depth of focus presents challenges for High Volume Manufac... » read more

Metrology Of Thin Resist For High NA EUVL

One of the many constrains of high numerical aperture extreme ultraviolet lithography (High NA EUVL) is related to resist thickness. In fact, one of the consequences of moving from current 0.33NA to 0.55NA (high NA) is the depth of focus (DOF) reduction. In addition, as the resist feature lines shrink down to 8nm half pitch, it is essential to limit the aspect ratio to avoid pattern collapse. T... » read more