High-Temperature Processing of Molybdenum Interconnects


A technical paper titled "Solving the Annealing of Mo Interconnects for Next-Gen Integrated Circuits" was published by researchers at the National University of Singapore, A*STAR, and imec. Abstract "Recent surge in demand for computational power combined with strict constraints on energy consumption requires persistent increase in the density of transistors and memory cells in integrated ... » read more

GaN Devices: Properties and Performance At Extremely High Temperatures


A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD


A new technical paper titled "3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD" was published by researchers at Arizona State University. Abstract "This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying char... » read more

Characteristics of Three-Gated Reconfigurable FETs


A new technical paper titled "Insights into the Temperature Dependent Switching Behaviour of Three-Gated Reconfigurable Field Effect Transistors" was published by researchers at NaMLAB and TU Dresden. "In this work, it is possible to assess the performances of Three-Gated Reconfigurable Field Effect Transistors within a considerable temperature span and finally provide significant insights o... » read more

High-Temperature Stable Spin-On Carbon Materials For Advanced Pattern Transfer Applications


In recent years a strong demand has arisen for spin-on carbon (SOC) materials compatible with high-temperature processes. This requirement is to enable usage of high-temperature SOC (HTSOC) materials in integration schemes utilizing chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) processes. In addition to compatibility with the high-temperature deposition processes, planari... » read more

High-Temperature-Stable, Spin-On Carbon Materials For High-Aspect-Ratio Gap-Fill Applications


Brewer Science, Inc. has developed a class of novel, high-temperature-stable spin-on carbon (SOC)-based materials with excellent processability. These SOCs are cured under mild conditions and have flow properties that enable the fill of high-aspect-ratio vias in a void-free manner. Moreover, this new class of SOCs has remarkable thermal stability and can survive temperatures of up to 550°C wit... » read more

Power/Performance Bits: Jan. 2


High-temp electronics Researchers at Purdue University, UC Santa Cruz, and Stanford developed a semiconducting plastic capable of operating at extreme temperatures. The new material, which combines both a semiconducting organic polymer and a conventional insulating organic polymer could reliably conduct electricity in up to 220 degrees Celsius (428 F). "One of the plastics transports the ch... » read more