tag: Huazhong University of Science and Technology

Chip Industry Technical Paper Roundup: Dec. 8
By Emma Riverso - 08 Dec, 2025 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=499 /] Find more semiconductor research papers here and in the most recent Chip Industry Week in Review.   » read more

Scalable Fabrication of Nano-OLEDs Smaller Than The Defraction Limit (ETH Zurich, U. of Alberta, IISc)
By Technical Paper Link - 02 Dec, 2025 - Comments: 0

A technical paper titled "Scalable nanopatterning of organic light-emitting diodes beyond the diffraction limit" was published by researchers at ETH Zurich, University of Alberta, Indian Institute of Science (IISc) and Huazhong University of Science and Technology. Abstract: "Miniaturization of light-emitting diodes below the diffraction limit of the emission wavelength can enable super-r... » read more

Research Bits: Dec. 11
By Jesse Allen - 11 Dec, 2024 - Comments: 0

Photonic AI processor Researchers from Massachusetts Institute of Technology (MIT), Enosemi, and Periplous developed a fully integrated photonic processor that can perform all the key computations of a deep neural network optically on the chip. The chip is fabricated using commercial foundry processes and uses three layers of devices that perform linear and nonlinear operations. A particula... » read more

Enabling Advanced Devices With Atomic Layer Processes
By Katherine Derbyshire - 18 Apr, 2024 - Comments: 2

Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect fabrication at the most advanced nodes. ALD can be speeded up somewhat, but the real shift is the rising value of precise composition and thickness control at the most advanced nodes, which makes the ext... » read more

Research Bits: Apr. 2
By Jesse Allen - 02 Apr, 2024 - Comments: 0

Stretchy, sensitive circuits Researchers from Stanford University developed skin-like, stretchable integrated circuits capable of driving a micro-LED screen with a refresh rate of 60 Hz and detecting a braille array that is more sensitive than human fingertips. The stretchable transistors are made from semiconducting carbon nanotubes sandwiched between soft elastic electronic materials. The... » read more

Research Bits: May 17
By Jesse Allen - 17 May, 2022 - Comments: 0

Magnetic storage structures Researchers from The Ohio State University and Universidad Nacional Autonoma de Mexico investigated a new material that could potentially increase the capacity of magnetic storage devices. They identified manganese germanide, an unusual magnetic material in which the magnetism follows helices, similar to the structure of DNA. The structure gives rise to a number ... » read more

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware
By Technical Paper Link - 21 Aug, 2021 - Comments: 0

Abstract "In neuromorphic hardware, peripheral circuits and memories based on heterogeneous devices are generally physically separated. Thus exploring homogeneous devices for these components is an important issue for improving module integration and resistance matching. Inspired by ferroelectric proximity effect on two-dimensional materials, we present a tungsten diselenide-on-LiNbO3 cascaded... » read more

Power/Performance Bits: March 30
By Jesse Allen - 30 Mar, 2021 - Comments: 0

Harvesting body heat Researchers at University of Colorado Boulder, Harbin Institute of Technology, Southeast University, and Huazhong University of Science and Technology designed a stretchy thermoelectric generator that can be worn against the skin to power small wearable electronics using body heat. The stretchy material polyimine is used as the base of the device. A series of thin therm... » read more

Power/Performance Bits: June 18
By Jesse Allen - 18 Jun, 2019 - Comments: 0

Multi-value logic transistor Researchers at the University of Texas at Dallas, Hanyang University, Gwangju Institute of Science and Technology, Yonsei University, Kookmin University, and Ulsan National Institute of Science and Technology developed and fabricated a transistor capable of storing intermediate values between 0 and 1. Such a multi-value logic transistor would allow more operations ... » read more

System Bits: June 4
By Jeff Dorsch - 04 Jun, 2019 - Comments: 0

Thin films for quantum computing Researchers at Los Alamos National Laboratory report their development of two-dimensional tungsten/selenium thin films that can control the emission of single photons, potentially useful in quantum technologies. “Efficiently controlling certain thin-film materials so they emit single photons at precise locations—what’s known as deterministic quantum em... » read more

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