Predicting And Preventing Process Drift


Increasingly tight tolerances and rigorous demands for quality are forcing chipmakers and equipment manufacturers to ferret out minor process variances, which can create significant anomalies in device behavior and render a device non-functional. In the past, many of these variances were ignored. But for a growing number of applications, that's no longer possible. Even minor fluctuations in ... » read more

Analog Circuits Enabling Learning in Mixed-Signal Neuromorphic SNNs, With Tristate Stability and Weight Discretization Circuits


A technical paper titled “Neuromorphic analog circuits for robust on-chip always-on learning in spiking neural networks” was published by researchers at University of Zurich and ETH Zurich. Abstract: "Mixed-signal neuromorphic systems represent a promising solution for solving extreme-edge computing tasks without relying on external computing resources. Their spiking neural network circui... » read more

Analog On-Chip Learning Circuits In Mixed-Signal Neuromorphic SNNs


A technical paper titled "Neuromorphic analog circuits for robust on-chip always-on learning in spiking neural networks" was published by researchers at Institute of Neuroinformatics, University of Zurich, and ETH Zurich. Abstract: "Mixed-signal neuromorphic systems represent a promising solution for solving extreme-edge computing tasks without relying on external computing resources. Their s... » read more

More Errors, More Correction in Memories


As memory bit cells of any type become smaller, bit error rates increase due to lower margins and process variation. This can be dealt with using error correction to account for and correct bit errors, but as more sophisticated error-correction codes (ECC) are used, it requires more silicon area, which in turn drives up the cost. Given this trend, the looming question is whether the cost of ... » read more

Possible Uses Narrow For Negative Capacitance FETs


The discovery of a ferroelectric phase in hafnium dioxide (HfO2) has sparked significant interest in opportunities for integration of ferroelectric transistors and memories with conventional CMOS devices. Demonstrations of “negative capacitance” behavior in particular suggest these devices might evade the 60 mV/decade limit on subthreshold swing, thereby improving transistor efficiency. ... » read more