tag: IBM

NXP To Buy Freescale For $16.7B
By Ann Mutschler - 02 Mar, 2015 - Comments: 0

By Ann Steffora Mutschler & Ed Sperling Dutch semiconductor giant NXP Semiconductors will buy Texas-based Freescale Semiconductor for $16.7 billion—$11.8 billion in cash, $5.6 billion worth of debts, minus $696 million in cash reserves—creating a combined company with a broad-based product portfolio and projected annual revenue of more than $10 billion. Given the size of the deal... » read more

How To Deal With Electromigration
By Katherine Derbyshire - 02 Mar, 2015 - Comments: 8

The replacement of aluminum with copper interconnect wiring, first demonstrated by IBM in 1997, brought the integrated circuit industry substantial improvements in both resistance to electromigration and line conductivity. Copper is both a better and more stable conductor than aluminum. Difficult though the transition was, it helped extend device scaling for another eighteen years (and counting... » read more

The Week In Review: Design/IoT
By Jesse Allen - 27 Feb, 2015 - Comments: 0

Mergers & Acquisitions NXP acquired Quintic’s Bluetooth Low Energy and Wearable businesses, adding BLTE to their low power RF-connectivity portfolio. The team of approximately 65 is expected to join NXP when the deal closes in Q1 2015. Tools Cadence unveiled the integration of Forte's Cynthesizer with their own C-to-Silicon Compiler. The result is the Stratus high-level synthesis... » read more

GaN Manufacturing Meets Big Silicon
By Michael Watts - 20 Feb, 2015 - Comments: 0

I have been talking about GaN on Silicon for several years because it offers a path to cost reduction in LED’s in the same way as silicon semiconductors. This year at Photonics West 2015, Aixtron presented its next generation 6-inch wafer system with all the automation that the semiconductor guys expect to be able to build GaN power transistors. The systems are configured as cluster tools... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 20 Feb, 2015 - Comments: 0

For years, chipmakers have attempted to build fabs in India. So far, however, India has failed to set up modern fabs and for good reason. There are issues in terms of obtaining dependable power and water for a fab in India, according to Will Strauss, president of Forward Concepts, who added that India also suffers from government bureaucracy. India is still trying. Last week, Cricket Semicon... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 06 Feb, 2015 - Comments: 0

IBM continues to cut jobs, according to IEEE Spectrum and an IBM employee organization. Meanwhile, IBM and SUNY Polytechnic Institute announced that more than 220 engineers and scientists who lead IBM's advanced chip R&D efforts at SUNY Poly's Albany Nanotech campus will become part of IBM Research. While military applications continue to experience strong growth in RF gallium-nitride (GaN)... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 30 Jan, 2015 - Comments: 0

This week, IBM began to cut jobs amid lackluster results. Big Blue is also in the process of selling its chip unit to GlobalFoundries. GlobalFoundries said the jobs are safe at IBM Micro, at least for now, according to a report the Press and Sun-Bulletin. What’s the latest with Applied Materials’ proposed acquisition with Tokyo Electron Ltd. (TEL)? “Germany, Israel and Singapore approv... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 09 Jan, 2015 - Comments: 0

China’s ambitious plan in the 1990s to create numerous foundries did not come to fruition. But in 2014, the Chinese government described new semiconductor industry programs that will utilize investments by both the Chinese national government ($19.5 billion) and local government and private equity investors ($97.4 billion). “IC Insights believes that these outlays have the potential to sign... » read more

DSA Moves Ahead
By Katherine Derbyshire - 19 Dec, 2014 - Comments: 0

It can be difficult to make DSA structures other than uniform arrays. One solution is to print a grating over a large area, then use a “cut” mask to eliminate the unwanted features. The challenge, though, is that aligning the cut mask to an array of tightly spaced features, such as the fins for a FinFET transistor layer, can require extremely demanding overlay specifications. While reducing... » read more

Unraveling The Mysteries At IEDM
By Mark LaPedus - 19 Dec, 2014 - Comments: 0

In some respects, the 2014 IEEE International Electron Devices Meeting (IEDM) was no different than past events. The event, held this week in San Francisco, included the usual and dizzying array of tutorials, sessions, papers and panels. On the leading-edge CMOS front, for example, the topics included [getkc id="82" kc_name="2.5D"]/[getkc id="42" kc_name="3D IC"] chips, III-V materials, [getkc ... » read more

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