GaN power modules
Gallium-nitride (GaN) devices are emerging in several markets, such as power semiconductors and RF.
GaN, a binary III-V compound, is a wide-bandgap technology, meaning it is faster and more efficient than silicon-based devices. GaN has 10 times the breakdown field strength with double the electron mobility than silicon.
Generally, some GaN vendors don’t use a traditio...
» read more
