tag: IGBTs

Improving Reliability For GaN And SiC
By Mark LaPedus - 18 Jun, 2020 - Comments: 2

Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in systems, they must prove to be reliable. As with previous products, suppliers are quick to point out that the new devices are reliable, although there are some issues that can occasionally surface... » read more

MOCVD Vendors Eye New Apps
By Mark LaPedus - 20 Feb, 2020 - Comments: 0

Several equipment makers are developing or ramping up new metalorganic chemical vapor deposition (MOCVD) systems in the market, hoping to capture the next wave of growth applications in the arena. Competition is fierce among the various MOCVD equipment suppliers in the market, namely Aixtron, AMEC and Veeco. In addition, MOCVD equipment suppliers are looking for renewed growth in 2020, but b... » read more

Power Semi Wars Begin
By Mark LaPedus - 23 Oct, 2019 - Comments: 1

Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market. Power semiconductors are specialized transistors that incorporate different and competitive technologies like GaN, SiC and silicon. Power semis operate as a switch in high-volt... » read more

Power/Performance Bits: June 25
By Jesse Allen - 25 Jun, 2019 - Comments: 0

Improving IGBTs Researchers at the University of Tokyo developed a power switching device that surpasses previous performance limits, showing that there may still be gains ahead for the silicon-based devices, which have been thought to be approaching their limits. The team's improved insulated gate bipolar transistor (IGBT) used a scaling approach, and simulations showed that downscaling pa... » read more

SiC Demand Growing Faster Than Supply
By Mark LaPedus - 23 May, 2019 - Comments: 2

The silicon carbide (SiC) industry is in the midst of a major expansion campaign, but suppliers are struggling to meet potential demand for SiC power devices and wafers in the market. In just one example of the expansion efforts, Cree plans to invest up to $1 billion to increase its SiC fab and wafer capacities. As part of the plan, Cree is developing the world’s first 200mm (8-inch) SiC f... » read more

What Happened To GaN And SiC?
By Mark LaPedus - 03 Feb, 2015 - Comments: 6

About five years ago, some chipmakers claimed that traditional silicon-based power MOSFETs had hit the wall, prompting the need for a new power transistor technology. At the time, some thought that two wide-bandgap technologies—gallium nitride (GaN) on silicon and silicon carbide (SiC) MOSFETs—would displace the ubiquitous power MOSFET. In addition, GaN and SiC were supposed to pose a t... » read more

Searching For The Next Power Transistor
By Mark LaPedus - 22 Jan, 2015 - Comments: 0

For decades, the industry has relied on various power semiconductors to control and convert electrical power in an efficient manner. Power semis are ubiquitous, as they are found in adapters, appliances, cars, elevators, switching power supplies, power grids and other systems. But today’s silicon-based power semiconductor transistor technologies, such as IGBTs, MOSFETs and thyristors, are ... » read more

IGBT Power Cycling And Lifetime Testing
By Mathew Clark - 15 Jan, 2015 - Comments: 0

I have never been very good at introducing topics. During my presentations, I either jump directly into the subject matter, or start with a joke. My mom always said I could be a stand-up comedian. I prefer to sit. Oddly, that led me to becoming an engineer. And while this introduction does not lead me any closer to my actual topic, I presume some people rolled their eyes back and crossed their ... » read more

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