AI Design In Korea


Like many in the semiconductor design businesses, Arteris IP is actively working with the Korean chip companies. This shouldn’t be a surprise. If a company is building an SoC of any reasonable size, it needs network-on-chip (NoC) interconnect for optimal QoS (bandwidth and latency regulation and system-level arbitration) and low routing congestion, even in application-centric designs such as ... » read more

Logic Chip, Heal Thyself


If a single fault can kill a logic chip, that doesn’t bode well for longevity of complex multi-chip systems. Obsolescence in chips is not just an industry ploy to sell more chips. It is a fact of physics that chips don’t last more than a few years, especially if overheated, and hit with higher voltage than it can stand. The testing industry does a great job finding defects during manufac... » read more

Finding Defects In IC Packages


Several equipment makers are ramping up new inspection equipment to address the growing defect challenges in IC packaging. At one time, finding defects in packaging was relatively straightforward. But as packaging becomes more complex, and as it is used in markets where reliability is critical, finding defects is both more difficult and more important. This has prompted the development of a ... » read more

Power/Performance Bits: Nov. 25


Rigid or flexible in one device Researchers at the Korea Advanced Institute of Science and Technology (KAIST), Electronics and Telecommunications Research Institute (ETRI) in Daejeon, University of Colorado Boulder, Washington University in St. Louis, Cornell University, and Georgia Institute of Technology proposed a system that would allow electronics to transform from stiff devices to flexib... » read more

Power/Performance Bits: Mar. 26


Material holds both electrons, holes Researchers at Ohio State University discovered a material that can hold both electrons and holes. They hope the material, the layered metal crystal NaSn2As2, could simplify electronics, potentially removing the need for multiple layers or materials. "It is this dogma in science, that you have electrons or you have holes, but you don't have both. But our... » read more

Manufacturing Bits: Jan. 2


Better nanowire MOSFETs At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Applied Materials presented a paper on a new and improved way to fabricate vertically stacked gate-all-around MOSFETs. More specifically, Imec and Applied reported on process improvements for a silicon nanowire MOSFET, which is integrated in a CMOS dual work function metal replacement metal ga... » read more

Manufacturing Bits: Nov. 21


Germanium-on-mica Germanium is an element that can be used in various applications in electronics, such as optoelectronics, semiconductors and others. For example, silicon-germanium (SiGe), an alloy of silicon and germanium, is used for making RF chips. In future finFET transistors, some are exploring the idea of using pure germanium for the PFET structure to boost the electron mobility in ... » read more

Power/Performance Bits: June 16


Lighting up graphene A team of scientists from Columbia University, Seoul National University, and Korea Research Institute of Standards and Science demonstrated an on-chip visible light source using graphene as a filament. They attached small strips of graphene to metal electrodes, suspended the strips above the substrate, and passed a current through the filaments to cause them to heat up.... » read more

Power/Performance Bits: April 14


Elastic energy harvesting Researchers from the Korea Advanced Institute of Science and Technology (KAIST) and Seoul National University collaborated to develop a hyper-stretchable elastic-composite energy harvesting device. Their stretchable piezoelectric generator can harvest mechanical energy to produce a ~4V power output with around 250% elasticity and a durability over 104 cycles. The... » read more

Manufacturing Bits: Dec. 2


Storage ring EUV source Needless to say, extreme ultraviolet (EUV) lithography is delayed. Chipmakers hope to insert EUV at the 7nm node, but that’s not a given. As before, the big problem is the EUV light source. So far, the source can’t generate enough power to enable the required throughput for EUV in mass production. Researchers at the SLAC National Accelerator Laboratory have one p... » read more

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