Optimizing Wafer Edge Processes For Chip Stacking


Stacking chiplets vertically using short and direct wafer-to-wafer bonds can reduce signal delay to negligible levels, enabling smaller, thinner packages with faster memory/processor speeds and lower power consumption. The race is on to implement wafer stacking and die-to-wafer hybrid bonding, now considered essential for stacking logic and memory, 3D NAND, and possibly multi-layer DRAM stac... » read more

Chip Industry Week In Review


Synopsys agreed to sell its Optical Solutions Group to Keysight for an undisclosed amount, in a deal deemed necessary for Synopsys to win regulatory approval for its planned acquisition of Ansys. The sale to Keysight is contingent on the Synopsys-Ansys deal going through. Meanwhile, Ansys has its own optical business. The U.S. Department of Defense (DoD) made the first awards for Microelectr... » read more

Reducing Transistor Capacitance At The 5nm Node Using A Source/Drain Contact Recess


In logic devices such as FinFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One potential way to reduce this parasitic capacitance is to add a source/drain contact (CT) recess step when building the source/drain metal structure. However, this additional structure can potentially increase the source/drain to via resistance. Using... » read more

New Materials Are in High Demand


Materials suppliers are responding to the intense pressures to improve power, performance, scaling, and cost issues, which follows a long timeline from synthesis to development and high volume manufacturing in fabs. The advances in machine learning help present a wide field of candidates, which engineers then narrow to potential use. When building standard logic semiconductor chips, the prim... » read more

Chip Industry Week In Review


Concerns mount on the use of American-manufactured semiconductors in Russian weapons, with Analog Devices, AMD, Intel and TI set to testify next week before the U.S. Senate Permanent Subcommittee on Investigations. Also, U.S. and other government agencies issued a joint advisory and more details about ongoing Russian military cyberattacks, espionage, and sabotage. The U.S. Commerce Departmen... » read more

Blog Review: Sept. 4


Synopsys' Jyotika Athavale and Randy Fish sit down with Google's Rama Govindaraju and Microsoft's Robert S. Chappell to discuss silent data corruption and why a solution will require chip designers and manufacturers, software and hardware engineers, vendors, and anyone involved in computer data to collaborate and take the issue seriously. Siemens' Karen Chow and Joel Mercier explain the rela... » read more

Chip Industry Technical Paper Roundup: August 20


New technical papers recently added to Semiconductor Engineering’s library: [table id=252 /] More ReadingTechnical Paper Library home » read more

Increasing Roles For Robotics In Fabs


Different types of robots with greater precision and mobility are beginning to be deployed in semiconductor manufacturing, where they are proving both reliable and cost-efficient. Static robots have been used for years inside of fabs, but they now are being supplemented by collaborative robots (cobots), autonomous mobile robots (AMRs), and autonomous humanoid robots to meet growing and widen... » read more

Chip Industry Week In Review


The U.S. Department of Commerce and Texas Instruments (TI) signed a non-binding preliminary memorandum of terms to provide up to $1.6 billion in CHIPS Act funding towards TI’s investment of over $18 billion for three 300mm semiconductor wafer fabs under construction in Texas and Utah. TI also expects to get about $6 billion to $8 billion from the U.S. Department of Treasury’s Investmen... » read more

Improving Parasitic Capacitance In Next-Generation DRAM Devices


As conventional DRAM devices continue to shrink, increases in parasitic capacitance at smaller dimensions can negatively impact device performance. New DRAM structures may be needed in the future, to lower total capacitance and achieve acceptable device performance. In this study, we compare the parasitic capacitance of a 6F2 honeycomb dynamic random-access memory (DRAM) device to the parasitic... » read more

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