tag: Lam Research

Blog Review: March 3
By Jesse Allen - 03 Mar, 2021 - Comments: 0

Siemens EDA's Ray Salemi considers incrementalism in engineering, the transition from drawing circuits to writing RTL, and the next big leap of using proxy-driven testbenches written in Python. Cadence's Shyam Sharma looks at key changes from LPDDR5 in the LPDDR5X SDRAM standard, which extends clock frequencies to include 937MHz and 1066MHz resulting in max data rates of 7500MT/s and 8533 MT... » read more

Blog Review: Feb. 24
By Jesse Allen - 24 Feb, 2021 - Comments: 0

Siemens EDA's Harry Foster checks out the efficiency and effectiveness of verification on ASIC and IC designs with a look at how many projects meet the original schedule, the number of required spins, and classification of functional bugs. Cadence's Paul McLellan listens in as Philippe Magarshack of ST Microelectronics on how the company uses massive amounts of data generated by its fabs to ... » read more

Breaking The 2nm Barrier
By Mark LaPedus - 18 Feb, 2021 - Comments: 4

Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

New Transistor Structures At 3nm/2nm
By Mark LaPedus - 25 Jan, 2021 - Comments: 12

Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect trans... » read more

Hidden Costs In Faster, Low-Power AI Systems
By Ed Sperling - 20 Jan, 2021 - Comments: 1

Chipmakers are building orders of magnitude better performance and energy efficiency into smart devices, but to achieve those goals they also are making tradeoffs that will have far-reaching, long-lasting, and in some cases unknown impacts. Much of this activity is a direct result of pushing intelligence out to the edge, where it is needed to process, sort, and manage massive increases in da... » read more

A Triple-Deck CFET Structure With An Integrated SRAM Cell For The 2nm Technology Node And Beyond
By Coventor - 20 Jan, 2021 - Comments: 0

A novel triple-deck CFET structure is proposed for the first time as a candidate for area scaling. The proposed triple-deck CFET aggressively stacks a pass gate over an inverter to form a half SRAM bit cell. The integration flow and full metal connectivity have been carefully designed for functionality and array assembly. Most of the pitch used in the process is around 40nm, which is patternabl... » read more

Blog Review: Dec. 23
By Jesse Allen - 23 Dec, 2020 - Comments: 0

Cadence's Paul McLellan checks out how Arm is becoming a powerhouse in the server and high-end space with the addition of new R&D and a focus on getting the most out of its architecture. Siemens EDA's Harry Foster continues his look at verification trends in FPGAs by checking out adoption of different simulation and formal technologies. Synopsys' Taylor Armerding looks ahead to 2021 w... » read more

Process Window Optimization Of DRAM By Virtual Fabrication
By Daebin Yim - 21 Dec, 2020 - Comments: 0

New integration and patterning schemes used in 3D memory and logic devices have created manufacturing and yield challenges. Industrial focus has shifted from the scaling of predictable unit processes in 2D structures to the more challenging full integration of complex 3D structures. Conventional 2D layout DRC, offline wafer metrology, and offline electrical measurements are no longer sufficient... » read more

Variation Threat In Advanced Nodes, Packages Grows
By Ed Sperling - 21 Dec, 2020 - Comments: 0

Variation is becoming a much bigger and more complex problem for chipmakers as they push to the next process nodes or into increasingly dense advanced packages, raising concerns about the functionality and reliability of individual devices, and even entire systems. In the past, almost all concerns about variation focused on the manufacturing process. What printed on a piece of silicon didn't... » read more

3D NAND’s Vertical Scaling Race
By Mark LaPedus - 17 Dec, 2020 - Comments: 1

3D NAND suppliers are accelerating their efforts to move to the next technology nodes in a race against growing competition, but all of these vendors are facing an assortment of new business, manufacturing, and cost challenges. Two suppliers, Micron and SK Hynix, recently leapfrogged the competition and have taken the scaling race lead in 3D NAND. But Samsung and the Kioxia-Western Digital (... » read more

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