Development Of High Voltage General-Purpose Pin-Electronics


Currently, there is a demand in Automated Test Equipment (ATE) to test both high-speed/low-voltage amplitude devices manufactured in advanced processes and low-speed / high-voltage amplitude devices manufactured in legacy processes by a pin-electronics equipment. However, it is difficult to achieve both the operating speed over than 1Gbps and the wide I/O range over than 10Vpp, due to the trade... » read more

Power Amp Wars Begin For 5G


Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a key component that boosts the RF power signals in base stations. It's based on two competitive technologies, silicon-based LDMOS or RF gallium nitride (GaN). GaN, a III-V technology, outperforms ... » read more

MOCVD Vendors Eye New Apps


Several equipment makers are developing or ramping up new metalorganic chemical vapor deposition (MOCVD) systems in the market, hoping to capture the next wave of growth applications in the arena. Competition is fierce among the various MOCVD equipment suppliers in the market, namely Aixtron, AMEC and Veeco. In addition, MOCVD equipment suppliers are looking for renewed growth in 2020, but b... » read more

RF GaN Gains Steam


Wide-bandgap semiconductors are hot topics these days. One wide-bandgap semi type--silicon carbide (SiC)--is the talk of the town and is gaining steam in electric vehicles and other systems. But let’s not forget about gallium nitride (GaN). GaN, a binary III-V material, has 10 times the breakdown field strength with double the electron mobility than silicon. GaN is used for LEDs, power ... » read more

GaN Versus Silicon For 5G


The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

Mixing 4G And 5G


5G networks will impact the number and types of ICs in end-user devices and the base stations used to transmit the signals (including the repeaters that rebroadcast those signals). And this is before we begin to consider the technology impact to the infrastructure required to support the data generated in a 5G ecosystem (servers, memory and so on). First, 5G is expected to transmit up to 10 ... » read more

Foundries See Mixed Future


Amid a tumultuous business environment, the silicon foundry industry is projected to see steady growth in a number of process segments in 2017. As in past years, the foundry market is expected to grow faster than the overall IC industry in 2017. But at the same time, the IC industry—the foundry customer base—continues to witness a frenetic wave of merger and acquisition activity. Basical... » read more

RF GaN Gains Steam


The RF [getkc id="217" kc_name="gallium nitride"] (GaN) device market is heating up amid the need for more performance with better power densities in a range of systems, such as infrastructure equipment, missile defense and radar. On one front, for example, RF GaN is beginning to displace a silicon-based technology for the power amplifier sockets in today’s wireless base stations. GaN is m... » read more

Waiting For 5G Technology


For some time, carriers, equipment OEMs and chipmakers have been gearing up for the next-generation wireless standard called 5th generation mobile networks, or 5G. 5G is the follow-on to the current wireless standard known as 4G, or long-term evolution (LTE). It will enable data transmission rates of more than 10Gbps, or 100 times the throughput of LTE. But the big question is whether 5G wil... » read more