An example of how to improve the trade-off in the general purpose pin-electronics by using the LDMOS process.
Currently, there is a demand in Automated Test Equipment (ATE) to test both high-speed/low-voltage amplitude devices manufactured in advanced processes and low-speed / high-voltage amplitude devices manufactured in legacy processes by a pin-electronics equipment. However, it is difficult to achieve both the operating speed over than 1Gbps and the wide I/O range over than 10Vpp, due to the trade-off between breakdown voltage and parasitic capacitance of transistor. We achieved the improvement of the trade-off in the general purpose pin-electronics by using the LDMOS process.
From Advantest’s Probo June 2021 magazine.
By the PE Core Engineering Section, 4th R&D department Technology Development Division, Technology Development Group ATE Business Group Hitoshi Nakamura others
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