tag: LWR

Metrology And Inspection For The Chiplet Era
By Gregory Haley - 06 Aug, 2024 - Comments: 0

New developments and innovations in metrology and inspection will enable chipmakers to identify and address defects faster and with greater accuracy than ever before, all of which will be required at future process nodes and in densely packed assemblies of chiplets. These advances will affect both front-end and back-end processes, providing increased precision and efficiency, combined with a... » read more

Key Technologies To Extend EUV To 14 Angstroms
By Laura Peters - 29 Jul, 2024 - Comments: 2

The top three foundries plan to implement high-NA EUV lithography as early as 2025 for the 18 angstrom generation, but the replacement of single exposure high-NA (0.55) over double patterning with standard EUV (NA = 0.33) depends on whether it provides better results at a reasonable cost per wafer. So far, 2024 has been a banner year for high-numerical aperture EUV lithography. Intel Foundry... » read more

Navigating the Metrology Maze For GAA FETs
By Gregory Haley - 08 Aug, 2023 - Comments: 1

The chip industry is pushing the boundaries of innovation with the evolution of finFETs to gate-all-around (GAA) nanosheet transistors at the 3nm node and beyond, but it also is adding significant new metrology challenges. GAA represents a significant advancement in transistor architecture, where the gate material fully encompasses the nanosheet channel. This approach allows for the vertical... » read more

Silicon Verified ASIC Implementation for Saber
By Technical Paper Link - 13 May, 2022 - Comments: 0

New research paper from Purdue University, KU Leuven, and Intel Labs titled "A 334uW 0.158mm2 Saber Learning with Rounding based Post-Quantum Crypto Accelerator." Abstract: "National Institute of Standard & Technology (NIST) is currently running a multi-year-long standardization procedure to select quantum-safe or post-quantum cryptographic schemes to be used in the future. Saber is the... » read more

Patterning Problems Pile Up
By Mark LaPedus - 20 Mar, 2017 - Comments: 4

Chipmakers are ramping up 16nm/14nm finFET processes, with 10nm and 7nm now moving into early production. But at 10nm and beyond, chipmakers are running into a new set of problems. While shrinking feature sizes of a device down to 10nm, 7nm, 5nm and perhaps beyond is possible using current and future fab equipment, there doesn't seem to be a simple way to solve the edge placement error (EPE)... » read more

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