Navigating the Metrology Maze For GAA FETs


The chip industry is pushing the boundaries of innovation with the evolution of finFETs to gate-all-around (GAA) nanosheet transistors at the 3nm node and beyond, but it also is adding significant new metrology challenges. GAA represents a significant advancement in transistor architecture, where the gate material fully encompasses the nanosheet channel. This approach allows for the vertical... » read more

Silicon Verified ASIC Implementation for Saber


New research paper from Purdue University, KU Leuven, and Intel Labs titled "A 334uW 0.158mm2 Saber Learning with Rounding based Post-Quantum Crypto Accelerator." Abstract: "National Institute of Standard & Technology (NIST) is currently running a multi-year-long standardization procedure to select quantum-safe or post-quantum cryptographic schemes to be used in the future. Saber is the... » read more

Patterning Problems Pile Up


Chipmakers are ramping up 16nm/14nm finFET processes, with 10nm and 7nm now moving into early production. But at 10nm and beyond, chipmakers are running into a new set of problems. While shrinking feature sizes of a device down to 10nm, 7nm, 5nm and perhaps beyond is possible using current and future fab equipment, there doesn't seem to be a simple way to solve the edge placement error (EPE)... » read more