Scalable AI/ML Method For Improved MTJ Performance (UT Austin, TSMC, TDK Headway)


A new technical paper titled "LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions" was published by researchers at University of Texas at Austin, TSMC, and TDK Headway Technologies Inc. Abstract "Magnetic tunnel junctions (MTJs) using magnesium oxide (MgO) tunnel barriers face challenges... » read more

Research Bits: Dec. 16


Back-end integration Researchers from Massachusetts Institute of Technology (MIT) and the University of Waterloo propose a back-end integration platform that enables the fabrication of transistors and memory devices in a single compact stack on a chip. The approach uses amorphous indium oxide as the active channel layer of the back-end transistor. The properties of indium oxide allow a thin... » read more

Research Bits: Sept. 23


Opto-electrical excitation of MTJs Researchers at the University of Greifswald, International Iberian Nanotechnology Laboratory, Max Planck Institute for the Science of Light, and Aarhus University advanced the use of magnetic tunnel junctions (MTJs) for neuromorphic computing. The team developed a hybrid opto-electrical excitation scheme that combines electrical currents with short laser p... » read more

The Impact of Magnetic Fields On STT-MRAM Operations


A technical paper titled "Impact of external magnetic fields on STT-MRAM" was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. Abstract "This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of... » read more

Research Bits: Sept. 24


Modeling negative capacitance Researchers from Lawrence Berkeley National Laboratory developed an open-source 3D simulation framework capable of modeling the atomistic origins of negative capacitance in ferroelectric thin films at the device level. When a material has negative capacitance, it can store a greater amount of electrical charge at lower voltages. The team believes the FerroX fra... » read more

MTJ-Based CRAM Array


A new technical paper titled "Experimental demonstration of magnetic tunnel junction-based computational random-access memory" was published by researchers at University of Minnesota and University of Arizona, Tucson. Abstract "The conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence because ... » read more

Guidelines For A Single-Nanometer Magnetic Tunnel Junction (MTJ)


A technical paper titled “Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities” was published by researchers at Tohoku University, Université de Lorraine, and Inamori Research Institute for Science. Abstract: "Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements is critical for future electronics with spin-... » read more

VCMA-Controlled MTJ Devices For Probabilistic Computing Applications


A technical paper titled “Probabilistic computing with voltage-controlled dynamics in magnetic tunnel junctions” was published by researchers at Northwestern University, University of Messina, Western Digital Corporation, and Universitat Jaume I. Abstract: "Probabilistic (p-) computing is a physics-based approach to addressing computational problems which are difficult to solve by convent... » read more

Feasibility of Using Domain Wall-Magnetic Tunnel Junction for Magnetic Analog Addressable Memories


A new technical paper titled "Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data" was published by researchers at UT Austin and Samsung Advanced Institute of Technology (SAIT). Abstract "With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conver... » read more

MTJ-based Circuits Provide Low-Cost, Energy Efficient Solution For Future Hardware Implementation in SC Algorithms


A review paper titled "Review of Magnetic Tunnel Junctions for Stochastic Computing" was published by researchers at University of Minnesota Twin Cities. Funding agencies include Semiconductor Research Corporation (SRC), CAPSL, NIST, DARPA and others. Abstract: "Modern computing schemes require large circuit areas and large energy consumption for neuromorphic computing applications, such as... » read more

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