Photomask Challenges At 3nm And Beyond

By Mark LaPedus - 25 Jan, 2022 - Comments: 1

Experts at the Table: Semiconductor Engineering sat down to discuss optical and EUV photomasks issues, as well as the challenges facing the mask business, with Naoya Hayashi, research fellow at DNP; Peter Buck, director of MPC & mask defect management at Siemens Digital Industries Software; Bryan Kasprowicz, senior director of technical strategy at Hoya; and Aki Fujimura, CEO of D2S. What f... » read more

Gearing Up For High-NA EUV

By Mark LaPedus - 21 Oct, 2021 - Comments: 2

The semiconductor industry is moving full speed ahead to develop high-NA EUV, but bringing up this next generation lithography system and the associated infrastructure remains a monumental and expensive task. ASML has been developing its high-numerical aperture (high-NA) EUV lithography line for some time. Basically, high-NA EUV scanners are the follow-on to today’s EUV lithography systems... » read more

EUV’s Uncertain Future At 3nm And Below

By Mark LaPedus - 21 May, 2020 - Comments: 5

Several foundries have moved extreme ultraviolet (EUV) lithography into production at both 7nm and 5nm, but now the industry is preparing for the next phase of the technology at 3nm and beyond. In R&D, the industry is developing new EUV scanners, masks and resists for the next nodes. 3nm is slated for 2022, followed by 2nm a year or two later. Nonetheless, it will require massive funding... » read more

Lithography Options For Next-Gen Devices

By Mark LaPedus - 18 Apr, 2019 - Comments: 2

Chipmakers are ramping up extreme ultraviolet (EUV) lithography for advanced logic at 7nm and/or 5nm, but EUV isn’t the only lithographic option on the table. For some time, the industry has been working on an assortment of other next-generation lithography technologies, including a new version of EUV. Each technology is different and aimed at different applications. Some are here today, w... » read more

Next EUV Issue: Mask 3D Effects

By Mark LaPedus - 25 Apr, 2018 - Comments: 6

As extreme ultraviolet (EUV) lithography moves closer to production, the industry is paying more attention to a problematic phenomenon called mask 3D effects. Mask 3D effects involve the photomask for EUV. In simple terms, a chipmaker designs an IC, which is translated from a file format into a photomask. The mask is a master template for a given IC design. It is placed in a lithography scan... » read more

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tag: mask 3D effects

Photomask Challenges At 3nm And Beyond

Gearing Up For High-NA EUV

EUV’s Uncertain Future At 3nm And Below

Lithography Options For Next-Gen Devices

Next EUV Issue: Mask 3D Effects

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