System Bits: April 28


Transistor encasing for better device performance ECE Illinois researchers have discovered a more effective method for closing gaps in atomically small wires. Led by Professor Joseph W. Lyding and graduate student Jae Won Do, the team reported this new transistor technology comprised of carbon nanotube wires shows promise in replacing silicon because it can operate 10 times as fast and is ... » read more

System Bits: April 21


DARPA's Research DARPA's Semiconductor Technology Advanced Research Network, aka Starnet, unveiled its research plans for 2015 and 2016. Topping the list in 2015 is an investigation into the feasibility of using advanced 2D materials for ultra low-power devices, along with the fab methodology, modeling and simulation tools necessary to make it all work. The fiscal 2015 research will look a... » read more

System Bits: April 14


Antennas on a chip In what is being called the missing piece of the puzzle of electromagnetic theory, a team of researchers at the University of Cambridge have figured out one of the mysteries of electromagnetism, that they believe could allow the design of antennas small enough to be integrated into a chip. These ultra-small antennas – the so-called ‘last frontier’ of semiconductor desi... » read more

System Bits: April 7


Ultra-efficient magnetic-field detector In a development that could lead to miniaturized, battery-powered devices for medical and materials imaging, contraband detection, and even geological exploration, MIT researchers have developed a new, ultrasensitive magnetic-field detector they say is 1,000 times more energy-efficient than its predecessors. Magnetic-field detectors, or magnetometers,... » read more

System Bits: March 31


Virtual nose reduces video game simulator sickness While virtual reality games often cause simulator sickness – inducing vertigo and sometimes nausea — new research by Purdue University points to a potential strategy to ease the affliction: adding a virtual nose. They explained that a number of physiological systems control the onset of simulator sickness including a person's overall se... » read more

Power/Performance Bits: March 31


Reusable gallium arsenide wafers A manufacturing process developed by Stanford researchers could dramatically reduce the cost of gallium arsenide electronics, potentially opening up new applications for the material. In the search for silicon's replacement, gallium arsenide (GaAs) has much to offer on performance. It's faster than silicon, less noise, and features a wide direct band gap�... » read more

System Bits: March 10


Surviving entanglement breakdown Researchers at MIT have discovered that preserving the fragile quantum property known as entanglement isn’t necessary to reap benefits. By way of background, the MIT team reminded that the promise of quantum information processing, i.e., solving problems that classical computers can’t, as well as perfectly secure communication depends on a phenomenon cal... » read more

Power/Performance Bits: Feb. 24


Simulating ultrafast phenomena Interesting phenomena can happen when electronic states in materials are excited during dynamic processes. As an example, electrical charge transfer can take place on quadrillionth-of-a-second, or femtosecond, timescales. Numerical simulations in real-time provide the best way to study these processes. Such simulations, however, can be extremely expensive. R... » read more

System Bits: Feb. 24


New solder for semis A research team led by the University of Chicago has demonstrated how semiconductors can be soldered and still deliver good electronic performance by working out new chemistry for a broad class of compositions relevant to semiconductors. The compounds that the team developed can be used to join pieces of semiconductor, which researchers have longed struggled with. Th... » read more

Still Waiting For III-V Chips


For years, chipmakers have been searching for an alternative material to replace traditional silicon in the channel for advanced CMOS devices at 7nm and beyond. There’s a good reason, too: At 7nm, silicon will likely run out of steam in the channel. Until recently, chipmakers were counting on III-V materials for the channels, at least for NFET. Compared to silicon, III-V materials provide ... » read more

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