tag: molecular beam epitaxy

Surface Modification for III-V Selective Area MBE of Non-Selective Mask Materials (UT Austin, Harvard)
By Technical Paper Link - 02 Jun, 2026 - Comments: 0

Researchers from University of Texas at Austin and Harvard University published “Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials”. Abstract Excerpt “Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel... » read more

Mitigating Structural Defects During The Growth Of 2D vdW Chalcogenides By MBE (Penn State Univ.)
By Technical Paper Link - 17 Nov, 2025 - Comments: 0

A new technical paper titled "Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy" was published by researchers at Penn State University. Abstract "The growth of wafer-scale van der Waals (vdW) thin films and heterostructures by molecular beam epitaxy (MBE) is important for future applications in quantum technologies, next-generatio... » read more

Research Bits: Nov. 10
By Jesse Allen - 10 Nov, 2025 - Comments: 0

Post-doping plasma for DRAM capacitors Researchers from Ulsan National Institute of Science and Technology (UNIST), Pohang University of Science and Technology (POSTECH), and Seoul National University of Science and Technology developed a post-doping plasma (PDP) process to improve the performance of DRAM capacitors. Aluminum-doped titanium dioxide (Al-doped TiO2) is a promising material fo... » read more

Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
By Technical Paper Link - 10 Mar, 2023 - Comments: 0

A new technical paper titled "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT" was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable,” That means it can function as several devices, such as one amplifier working as several amplifiers that we can dynamically control. This allows us to reduce the circuit area and lower the... » read more

Nanoscale (5nm) Ferroelectric Semiconductor (University of Michigan)
By Technical Paper Link - 08 Feb, 2023 - Comments: 0

A new technical paper titled "Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy" was published by researchers at University of Michigan, with DARPA funding. "Ferroelectric semiconductors stand out from others because they can sustain an electrical polarization, like the electric version of magnetism. But unlike a fridge magn... » read more

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy
By Technical Paper Link - 13 Nov, 2021 - Comments: 0

Abstract: We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via tw... » read more

RF GaN Gains Steam
By Mark LaPedus - 25 Jul, 2016 - Comments: 0

The RF [getkc id="217" kc_name="gallium nitride"] (GaN) device market is heating up amid the need for more performance with better power densities in a range of systems, such as infrastructure equipment, missile defense and radar. On one front, for example, RF GaN is beginning to displace a silicon-based technology for the power amplifier sockets in today’s wireless base stations. GaN is m... » read more

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2026 SMG   |  Terms of Service  |  Privacy Policy