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Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors


A new technical paper titled "Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices" was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work was partially supported by the Defense Threat Reduction Agency and by the U.S. Air Force Office of Scientific Research and Air Force Research Laboratory. According to the paper, "this Perspect... » read more

UT Dallas: Electronic, Thermodynamic & Dielectric Properties of Two Novel vdW Materials


New technical paper titled "A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH)2 and Mg(OH)2," from University of Texas at Dallas. With funding support from National Science Foundation and U.S. Department of Defense,  Defense Threat Reduction Agency. Abstract "We perform first-principles calculations to explore the electronic, thermodynam... » read more

NBTI & PBTI of MOSFETs


Technical paper titled "Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction" from researchers at Liverpool John Moores University. Abstract "CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a key issue. To optimize chip design, trade-offs between reliability, speed, power consumption, and cost must be carried out. This r... » read more

Driving Toward More Rugged, Less Expensive SiC


Silicon carbide is gaining traction in the power semiconductor market, particularly in electrified vehicles, but it's still too expensive for many applications. The reasons are well understood, but until recently SiC was largely a niche technology that didn't warrant the investment. Now, as demand grows for chips that can work in high-voltage applications, SiC is getting a much closer look. ... » read more

GaN ICs Wanted for Power, EV Markets


Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

Silicon-based Power Semis Face Challenges


Suppliers of power semiconductors continue to develop and ship devices based on traditional silicon technology, but silicon is nearing its limits and faces increased competition from technologies like GaN and SiC. In response, the industry is finding ways to extend traditional silicon-based power devices. Chipmakers are eking out more performance and prolonging the technology, at least in th... » read more

Safe And Reliable MOSFET Operation In Bidirectional Power Switch (BDPS) Applications


The global market for battery-powered applications is rapidly growing, including power tools, service robots, light electric vehicles, and many others. The evolution of switched-mode power supply (SMPS) topologies enables designers to ensure safe charging and discharging of the equipment’s battery using bidirectional converters through the same terminal. However, to meet the safety requiremen... » read more

Revving Up SiC And GaN


Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the demand for better tools to design, verify, and test these wide-bandgap devices. Both SiC and GaN are proving essential in areas such as battery management in electric vehicles. They can handle much ... » read more

China Accelerates Foundry, Power Semi Efforts


China has unveiled several initiatives to advance its domestic semiconductor industry, including a new and massive fab expansion campaign in the foundry, gallium-nitride (GaN), and silicon carbide (SiC) markets. The nation is making a big push into what it calls “third-generation semiconductors,” which is a misnomer. The term actually refers to two existing and common power semiconductor... » read more

Choosing A Gate Driver For Silicon Carbide MOSFETs


If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it? The answer to this question is: identify a suitable gate driver IC based on the peak current and power dissipation requirements of your application and a fitting gate resistor for your SiC... » read more

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