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All-inorganic perovskite quantum dot light-emitting memories


Abstract "Field-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-e... » read more

Power/Performance Bits: Nov. 16


Light-emitting memory Researchers from Kyushu University and National Taiwan Normal University propose a 'light-emitting memory' based on a perovskite that can simultaneously store and visually transmit data. The team used the idea in conjunction with resistive RAM (RRAM), in which states of high and low resistance represent ones and zeros. "The electrical measurements needed to check the r... » read more

Interest Grows In Ferroelectric Devices


Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

Manufacturing Bits: May 9


China’s quantum computer In its latest achievement, China has built a quantum computer. With its technology, the University of Science and Technology of China and Zhejiang University claimed to have set two records in quantum computing. In classical computing, the information is stored in bits, which can be either a “0” or “1”. In quantum computing, information is stored in quant... » read more