Interest Grows In Ferroelectric Devices


Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

Power/Performance Bits: Dec. 23


Glimpsing pathway of sunlight to electricity According to University of Oregon and Lund University researchers, four pulses of laser light on nanoparticle photocells in a University of Oregon spectroscopy experiment have opened a window on how captured sunlight can be converted into electricity. The work, which the researchers expect could inspire devices with improved efficiency in solar e... » read more