Review Paper: Negative Capacitance GAA-FET

A new technical paper titled "Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review" by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen Institute of Peking University. "The novel device structure of negative capacitance gate all around field effect transistor (NC GAA-FET) can combine both the advantages of GAA-FET and NC-FET, and ... » read more

Antiferroelectric negative capacitance from a structural phase transition in zirconia

New research paper from 24-person research team from Berkeley, Georgia Tech, MIT, and other institutions. Abstract "Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectrici... » read more

Interest Grows In Ferroelectric Devices

Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

Power/Performance Bits: Dec. 23

Glimpsing pathway of sunlight to electricity According to University of Oregon and Lund University researchers, four pulses of laser light on nanoparticle photocells in a University of Oregon spectroscopy experiment have opened a window on how captured sunlight can be converted into electricity. The work, which the researchers expect could inspire devices with improved efficiency in solar e... » read more