Metrology Advances Step Up To Sub-2nm Device Node Needs


Metrology and inspection are dealing with a slew of issues tied to 3D measurements, buried defects, and higher sensitivity as device features continue to shrink to 2nm and below. This is made even more challenging due to increasing pressure to ramp new processes more quickly. Metrology tool suppliers must exceed current needs by a process node or two to ensure solutions are ready to meet tig... » read more

Achieving Zero Defect Manufacturing Part 3: Prevention Of Defects


The concept of zero defect manufacturing has been around for decades, arising first in the aerospace and defense industry. Since then, this manufacturing approach has been adopted by the automotive industry, and it has only grown in importance as the sector transitions to electric vehicles. Given the role semiconductors play in today’s vehicles, and will play in the future, it is no surprise ... » read more

Defect Challenges Grow At The Wafer Edge


Reducing defects on the wafer edge, bevel, and backside is becoming essential as the complexity of developing leading-edge chips continue to increase, and where a single flaw can have costly repercussions that span multiple processes and multi-chip packages. This is made more difficult by the widespread rollout of such processes as hybrid bonding, which require pristine surfaces, and the gro... » read more

Promises and Perils of Parallel Test


Testing multiple devices at the same time is not providing the equivalent reduction in overall test time due to a combination of test execution issues, the complexity of the devices being tested, and the complex tradeoffs required for parallelism. Parallel testing is now the norm — from full wafer probe DRAM testing with thousands of dies to two-site testing for complex, high-performance c... » read more

Non-Destructive Measurement of Bottom Width in Deep Trench Isolation Structures using IRCD Metrology


As scaling in semiconductor devices continues, the aspect ratios of deep trench isolation (DTI) structures have increased. DTI structures are used in power devices, power management ICs and image sensors as a method to isolate active devices by reducing crosstalk, parasitic capacitance, latch-up and allowing for an increase breakdown voltage of active devices. Measurement of these structures in... » read more

Chip Industry Week In Review


Concerns mount on the use of American-manufactured semiconductors in Russian weapons, with Analog Devices, AMD, Intel and TI set to testify next week before the U.S. Senate Permanent Subcommittee on Investigations. Also, U.S. and other government agencies issued a joint advisory and more details about ongoing Russian military cyberattacks, espionage, and sabotage. The U.S. Commerce Departmen... » read more

Chip Industry Week in Review


The Biden-Harris Administration announced preliminary terms with HP for $50 million in direct funding under the CHIPs and Science Act to support the expansion and modernization of HP’s existing microfluidics and microelectromechanical systems (“MEMS”) facility in Corvallis, Oregon. CHIPS for America launched the CHIPS Metrology Community, a collaborative initiative designed to advance ... » read more

Achieving Zero Defect Manufacturing Part 2: Finding Defect Sources


Semiconductor manufacturing creates a wealth of data – from materials, products, factory subsystems and equipment. But how do we best utilize that information to optimize processes and reach the goal of zero defect manufacturing? This is a topic we first explored in our previous blog, “Achieving Zero Defect Manufacturing Part 1: Detect & Classify.” In it, we examined real-time defe... » read more

Metrology And Inspection For The Chiplet Era


New developments and innovations in metrology and inspection will enable chipmakers to identify and address defects faster and with greater accuracy than ever before, all of which will be required at future process nodes and in densely packed assemblies of chiplets. These advances will affect both front-end and back-end processes, providing increased precision and efficiency, combined with a... » read more

Driving Cost Lower and Power Higher With GaN


Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven by lower costs and processes that are more compatible with bulk silicon. Efficiency, power density (size), and cost are the three major concerns in power electronics, and GaN can meet all three c... » read more

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